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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 769/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 152A TO-247 |
In Stock128 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 152A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A TO-247 |
In Stock127 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 180A TO-247 |
In Stock340 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 182A TO-247 |
In Stock393 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 182A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 200A TO-247 |
In Stock277 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 200A TO-247 |
In Stock319 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 220A TO-247 |
In Stock457 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 220A TO-247 |
In Stock359 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 230A TO-247 |
In Stock280 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 230A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 550W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 240A TO-247 |
In Stock239 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 250A TO-247 |
In Stock359 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 250A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 550W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 280A TO-247 |
In Stock109 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 280A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 550W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 88A TO-247AD |
In Stock258 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 250A TO-264AA |
In Stock179 More on Order |
|
Series: MegaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 250A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 730W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 152A TO-220 |
In Stock292 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 152A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A TO-220 |
In Stock291 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 160A TO-220 |
In Stock438 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 180A TO-220 |
In Stock375 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 180A TO-220 |
In Stock449 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 182A TO-220 |
In Stock356 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 182A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 200A TO-220 |
In Stock237 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 200A TO-220 |
In Stock103 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 220A TO-220 |
In Stock104 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 430W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 220A TO-220 |
In Stock159 More on Order |
|
Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 240A TO-220 |
In Stock219 More on Order |
|
Series: TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2A TO-220 |
In Stock336 More on Order |
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Series: PolarHV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 70W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 50A TO-220 |
In Stock278 More on Order |
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Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 55A TO-220 |
In Stock151 More on Order |
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Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 27.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 64A TO-220 |
In Stock493 More on Order |
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Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 130W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 70A TO-220 |
In Stock245 More on Order |
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Series: TrenchMV™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 176W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |