FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 782/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RDX080N50FU6	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-220FM	In Stock211 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FM	Package / Case: TO-220-3 Full Pack
RDX100N60FU6	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-220FM	In Stock337 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FM	Package / Case: TO-220-3 Full Pack
RDX120N50FU6	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO-220FM	In Stock340 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FM	Package / Case: TO-220-3 Full Pack
RRS070N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A 8-SOIC	In Stock307 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RRS100N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC	In Stock476 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RRS110N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC	In Stock212 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 12.6mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RRS125N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC	In Stock289 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 10mOhm @ 12.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 40.5nC @ 15V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RRS130N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock217 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS060P05FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 45V 6A 8-SOIC	In Stock329 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 32.2nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS065N06FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6.5A 8-SOIC	In Stock423 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS070N05FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 45V 7A 8-SOIC	In Stock245 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS070P05FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 45V 7A 8-SOIC	In Stock445 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 47.6nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS085N05FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 45V 8.5A 8-SOIC	In Stock297 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 45V	Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
ZXMN2F34MATA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4A DFN-2X2	In Stock289 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 277pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.35W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN322	Package / Case: 3-VDFN
IRFR3706CPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A DPAK	In Stock128 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V	FET Feature: -	Power Dissipation (Max): 88W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7534D1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.3A MICRO-8	In Stock412 More on Order	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: Micro8™	Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRFR120NCPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.4A DPAK	In Stock493 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7807ZCPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 43A DPAK	In Stock266 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5305CPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A DPAK	In Stock117 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 31A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7811WCPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A DPAK	In Stock271 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 64A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU4104-701PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A IPAK	In Stock420 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: I-PAK (LF701)	Package / Case: TO-252-4, DPak (3 Leads + Tab)
IRF8707PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC	In Stock236 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7459PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A 8-SOIC	In Stock357 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRL3713SPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 260A D2PAK	In Stock340 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 260A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V	FET Feature: -	Power Dissipation (Max): 330W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFU3709Z-701P	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 86A IPAK	In Stock245 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 86A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V	FET Feature: -	Power Dissipation (Max): 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFS4410PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 88A D2PAK	In Stock284 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 88A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V	Vgs(th) (Max) @ Id: 4V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFR6215CPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock376 More on Order	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3716SPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 180A D2PAK	In Stock203 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V	FET Feature: -	Power Dissipation (Max): 210W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLL024ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 5A SOT-223	In Stock438 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRF8721PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A 8-SOIC	In Stock318 More on Order	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)

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