FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 836/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HAT2170H-EL-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 45A LFPAK	In Stock345 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 7V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 10V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK	Package / Case: SC-100, SOT-669
HAT2172H-EL-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A LFPAK	In Stock250 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 7V, 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK	Package / Case: SC-100, SOT-669
SSM3J108TU(TE85L)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A UFM	In Stock126 More on Order	Series: U-MOSIII	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V	Rds On (Max) @ Id, Vgs: 158mOhm @ 800mA, 4V	Vgs(th) (Max) @ Id: 1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: UFM	Package / Case: 3-SMD, Flat Leads
TK40P03M1(T6RSS-Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A 3DP 2-7K1A	In Stock181 More on Order	Series: U-MOSVI-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: DP	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK40P04M1(T6RSS-Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 40A 3DP 2-7K1A	In Stock324 More on Order	Series: U-MOSVI-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DP	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TK4A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.5A TO220SIS	In Stock112 More on Order	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
RSS100N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8SOIC	In Stock429 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS105N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.5A 8SOIC	In Stock242 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS110N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8SOIC	In Stock409 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS120N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A 8SOIC	In Stock153 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS125N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8SOIC	In Stock197 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS130N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8SOIC	In Stock234 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 8.1mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS080N05FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8A 8-SOIC	In Stock243 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS040P03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A 8SOIC	In Stock145 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS050P03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A 8SOIC	In Stock271 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS065N03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.5A 8SOIC	In Stock286 More on Order	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS075P03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.5A 8SOIC	In Stock259 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RRS090P03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8SOIC	In Stock313 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
RSS090P03FU6TB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A 8SOIC	In Stock143 More on Order	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V	Vgs (Max): 20V	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
BSB019N03LX G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 174A 2WDSON	In Stock321 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MG-WDSON-2, CanPAK M™	Package / Case: 3-WDSON
BSB024N03LX G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 145A 2WDSON	In Stock195 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 78W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MG-WDSON-2, CanPAK M™	Package / Case: 3-WDSON
BSB053N03LP G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 71A 2WDSON	In Stock416 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MG-WDSON-2, CanPAK M™	Package / Case: 3-WDSON
BSF053N03LT G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 71A 2WDSON	In Stock450 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MG-WDSON-2, CanPAK M™	Package / Case: 3-WDSON
BSF083N03LQ G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 53A MG-WDSON-2	In Stock440 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 36W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MG-WDSON-2, CanPAK M™	Package / Case: 3-WDSON
BSS126H6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.021A SOT23	In Stock387 More on Order	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 0V, 10V	Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V	Vgs(th) (Max) @ Id: 1.6V @ 8µA	Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS127H6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21MA SOT23	In Stock367 More on Order	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V	Vgs(th) (Max) @ Id: 2.6V @ 8µA	Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS159NH6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 230MA SOT23	In Stock245 More on Order	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 0V, 10V	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 26µA	Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 360mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS314PEL6327HTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT23	In Stock103 More on Order	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 6.3µA	Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS806NL6327HTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.3A SOT23	In Stock377 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V	Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V	Vgs(th) (Max) @ Id: 750mV @ 11µA	Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS816NW L6327	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.4A SOT323	In Stock205 More on Order	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V	Vgs(th) (Max) @ Id: 750mV @ 3.7µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-SOT323-3	Package / Case: SC-70, SOT-323

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