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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 861/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8 |
In Stock288 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8 |
In Stock184 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8 |
In Stock416 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8 |
In Stock455 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8 |
In Stock492 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8 |
In Stock372 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 40A PPAK SO-8 |
In Stock342 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 5.4W (Ta), 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 13A PPAK SO-8 |
In Stock233 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8 |
In Stock189 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8 |
In Stock151 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.9W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.4A PPAK SO-8 |
In Stock131 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
|
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|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.4A PPAK SO-8 |
In Stock302 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3.6A 2X2 4-MFP |
In Stock262 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.47W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-Microfoot |
Package / Case: 4-XFBGA, CSPBGA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 14.5A 2X2 6MFP |
In Stock418 More on Order |
|
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-Micro Foot™ (1.5x1) |
Package / Case: 6-MICRO FOOT®CSP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.2A 8SOIC |
In Stock143 More on Order |
|
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.6A 8SOIC |
In Stock128 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V |
Vgs (Max): ±9V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 8-SOIC |
In Stock377 More on Order |
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Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.3A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A PPAK SC75-6L |
In Stock363 More on Order |
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Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 13W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-75-6L Single |
Package / Case: PowerPAK® SC-75-6L |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK |
In Stock321 More on Order |
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Series: SkyFET®, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A POLARPAK |
In Stock249 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (S) |
Package / Case: 10-PolarPAK® (S) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 37A POLARPAK |
In Stock213 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (LH) |
Package / Case: 10-PolarPAK® (LH) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK |
In Stock102 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POLARPAK |
In Stock122 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 19.8A, 10V |
Vgs(th) (Max) @ Id: 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POLARPAK |
In Stock195 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 19.8A, 10V |
Vgs(th) (Max) @ Id: 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A POLARPAK |
In Stock354 More on Order |
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Series: WFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (S) |
Package / Case: 10-PolarPAK® (S) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18.3A POLARPAK |
In Stock367 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (SH) |
Package / Case: 10-PolarPAK® (SH) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44.5A POLARPAK |
In Stock246 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 12.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (U) |
Package / Case: 10-PolarPAK® (U) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44.5A POLARPAK |
In Stock315 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 12.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (U) |
Package / Case: 10-PolarPAK® (U) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK |
In Stock456 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A POLARPAK |
In Stock321 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 13.2A, 10V |
Vgs(th) (Max) @ Id: 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 5.2W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 10-PolarPAK® (L) |
Package / Case: 10-PolarPAK® (L) |