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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 865/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK9Y30-75B/C2,115
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 34A LFPAK

In Stock317

More on Order

Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 34A
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
JANTX2N6804
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 11A TO-204AA

In Stock207

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Series: Military, MIL-PRF-19500/562
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
NTMFS4825NFET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 171A SO-8FL

In Stock280

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
FET Feature: -
Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4825NFET3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 171A SO-8FL

In Stock287

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
FET Feature: -
Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4826NET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 66A SO-8FL

In Stock256

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
FET Feature: -
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4826NET3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 66A SO-8FL

In Stock218

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
FET Feature: -
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4827NET1G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 58.5A SO-8FL

In Stock128

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
FET Feature: -
Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4827NET3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.8A SO-8FL

In Stock322

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
FET Feature: -
Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMFS4923NET3G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 91A SO-8FL

In Stock435

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
FET Feature: -
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
NTMS5835NLR2G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 9.2A 8SOIC

In Stock176

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
NTMS5838NLR2G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 7.5A 8SOIC

In Stock191

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Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
NVD4804NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DPAK

In Stock291

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 11.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
MTD6N20ET5G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 6A DPAK

In Stock115

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4970NT4G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 38A DPAK

In Stock409

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 774pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS4917NR2G
ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 10.2A SO8FL

In Stock221

More on Order

Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1054pF @ 25V
FET Feature: -
Power Dissipation (Max): 880mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
PSMN011-30YL,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 51A LFPAK

In Stock161

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 726pF @ 15V
FET Feature: -
Power Dissipation (Max): 49W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
PSMN5R9-30YL,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 78A LFPAK

In Stock104

More on Order

Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1226pF @ 15V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
PSMN8R0-30YL,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 62A LFPAK

In Stock192

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1005pF @ 15V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
BUK624R5-30C,118
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 90A DPAK

In Stock111

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Series: Automotive, AEC-Q101, TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 25V
FET Feature: -
Power Dissipation (Max): 158W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6228-55C,118
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 31A DPAK

In Stock345

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Series: Automotive, AEC-Q101, TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6215-75C,118
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 57A DPAK

In Stock398

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Series: Automotive, AEC-Q101, TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 61.8nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
FET Feature: -
Power Dissipation (Max): 128W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PMR400UN,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 0.8A SOT416

In Stock275

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
FET Feature: -
Power Dissipation (Max): 530mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75, SOT-416
PMR290XN,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.97A SOT416

In Stock238

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
FET Feature: -
Power Dissipation (Max): 530mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75, SOT-416
BSP100,135
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3.2A SOT223

In Stock164

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
FET Feature: -
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-73
Package / Case: TO-261-4, TO-261AA
PHT6N06LT,135
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 2.5A SOT223

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
Vgs (Max): ±13V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
PMZ270XN,315
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.15A SOT883

In Stock485

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN1006-3
Package / Case: SC-101, SOT-883
PMN40LN,135
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.4A 6TSOP

In Stock220

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
PMN38EN,135
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.4A 6TSOP

In Stock165

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
FET Feature: -
Power Dissipation (Max): 1.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
PMN49EN,135
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.6A 6TSOP

In Stock368

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
FET Feature: -
Power Dissipation (Max): 1.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
PMN28UN,135
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 5.7A 6TSOP

In Stock166

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Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457