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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 906/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.33A VESM |
In Stock398 More on Order |
|
Series: U-MOSIII |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: VESM |
Package / Case: SOT-723 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3.2A TSM |
In Stock487 More on Order |
|
Series: π-MOSVI |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.6A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.5A TSM |
In Stock230 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 3A TSM |
In Stock100 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.7A TSM |
In Stock134 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5A S-MOS |
In Stock335 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 4V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.5A TSM |
In Stock220 More on Order |
|
Series: U-MOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSM |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.2A S-MINI |
In Stock358 More on Order |
|
Series: U-MOSIV |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-59 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 45A SP1 |
In Stock342 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 568W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 38A D3PAK |
In Stock132 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 278W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 35A TO-247 |
In Stock397 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 403W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 154A SP1 |
In Stock359 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 154A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A SOT227 |
In Stock268 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A SOT227 |
In Stock452 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 26A SOT227 |
In Stock279 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 |
In Stock403 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227 |
In Stock144 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 58A SOT227 |
In Stock359 More on Order |
|
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 95A SP4 |
In Stock204 More on Order |
|
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 462W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP4 |
Package / Case: SP4 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 |
In Stock118 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): 462W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 40A SP1 |
In Stock488 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 657W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 145A SP6 |
In Stock455 More on Order |
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Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 145A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3250W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP6 |
Package / Case: Module |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A T-MAX |
In Stock491 More on Order |
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Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 565W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 17A SOT227 |
In Stock448 More on Order |
|
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 460W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 53A D3PAK |
In Stock154 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA |
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V |
FET Feature: Super Junction |
Power Dissipation (Max): 417W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 19A SOT227 |
In Stock253 More on Order |
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Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 14A D3PAK |
In Stock231 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 19A D3PAK |
In Stock187 More on Order |
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Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 530mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 109A SP1 |
In Stock275 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 109A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 480W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 |
In Stock432 More on Order |
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Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V |
FET Feature: Super Junction |
Power Dissipation (Max): 462W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |