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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 956/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A 8DFN |
In Stock250 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 4.1W (Ta), 24W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
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Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH DFN |
In Stock248 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 26W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH DFN |
In Stock311 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 1.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH DFN |
In Stock223 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 36W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH DFN |
In Stock199 More on Order |
|
Series: AlphaMOS |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1086pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 23W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN-EP (3x3) |
Package / Case: 8-PowerVDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH D2PAK |
In Stock167 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock342 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: TO-220F-3SG |
Package / Case: TO-220-3 Full Pack |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock476 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH DPAK |
In Stock289 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 30W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ATPAK |
Package / Case: ATPAK (2 leads+tab) |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH DPAK |
In Stock173 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH TO220-3 |
In Stock194 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5A CPH6 |
In Stock465 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 75V 100A SMP-FD |
In Stock448 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A MCPH6 |
In Stock208 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88FL/MCPH6 |
Package / Case: 6-SMD, Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock445 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 15W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK/TP-FA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock117 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 15W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK/TP |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock113 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 15W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK/TP-FA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock377 More on Order |
|
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 15W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK/TP-FA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock406 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 26W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK/TP |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH |
In Stock390 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta), 26W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK/TP-FA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH TO-220FP-3 |
In Stock402 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH I2PAK |
In Stock266 More on Order |
|
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 8-TDSON |
In Stock330 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 8-TDSON |
In Stock272 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 11A |
In Stock363 More on Order |
|
Series: FASTIRFET™, HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 3.6V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 39W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 75A 8PQFN |
In Stock339 More on Order |
|
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3001pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 4.4W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V |
In Stock320 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V |
In Stock386 More on Order |
|
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.5A 8-SOIC |
In Stock370 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 35A PPAK 1212-8 |
In Stock213 More on Order |
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Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 3.8W (Ta), 52W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |