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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 32/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXYH30N170C
IXYS

Transistors - IGBTs - Single

1700V/108A HIGH VOLTAGE XPT IGB

In Stock477

More on Order

Series: XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 108A
Current - Collector Pulsed (Icm): 255A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Power - Max: 937W
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 28ns/150ns
Test Condition: 850V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
APT85GR120B2
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 170A 962W TO247

In Stock430

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 170A
Current - Collector Pulsed (Icm): 340A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Power - Max: 962W
Switching Energy: 6mJ (on), 3.8mJ (off)
Input Type: Standard
Gate Charge: 660nC
Td (on/off) @ 25°C: 43ns/300ns
Test Condition: 600V, 85A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX™
APT33GF120B2RDQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 64A 357W TMAX

In Stock238

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Power - Max: 357W
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 14ns/185ns
Test Condition: 800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
APT45GP120BG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 100A 625W TO247

In Stock426

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 170A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Power - Max: 625W
Switching Energy: 900µJ (on), 904µJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 18ns/102ns
Test Condition: 600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXYH25N250CHV
IXYS

Transistors - IGBTs - Single

IGBT 2500V 235A TO-247HV

In Stock295

More on Order

Series: XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 95A
Current - Collector Pulsed (Icm): 235A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Power - Max: 937W
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Input Type: Standard
Gate Charge: 147nC
Td (on/off) @ 25°C: 15ns/230ns
Test Condition: 1250V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247HV (IXYH)
APT100GN120B2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 245A 960W TMAX

In Stock424

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 245A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 960W
Switching Energy: 11mJ (on), 9.5mJ (off)
Input Type: Standard
Gate Charge: 540nC
Td (on/off) @ 25°C: 50ns/615ns
Test Condition: 800V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
IXGF25N250
IXYS

Transistors - IGBTs - Single

IGBT 2500V 30A 114W I4-PAK

In Stock107

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Power - Max: 114W
Switching Energy: -
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Supplier Device Package: ISOPLUS i4-PAC™
IXBF20N360
IXYS

Transistors - IGBTs - Single

IGBT 3600V 45A ISOPLUS I4PAK

In Stock270

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Series: BIMOSFET™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3600V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Power - Max: 230W
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 43nC
Td (on/off) @ 25°C: 18ns/238ns
Test Condition: 1500V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 1.7µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
STGB4M65DF2
STMicroelectronics

Transistors - IGBTs - Single

TRENCH GATE FIELD-STOP IGBT, M S

In Stock272

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Series: M
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 16A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Power - Max: 68W
Switching Energy: 40µJ (on), 136µJ (off)
Input Type: Standard
Gate Charge: 15.2nC
Td (on/off) @ 25°C: 12ns/86ns
Test Condition: 400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr): 133ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
STGWT15H60F
STMicroelectronics

Transistors - IGBTs - Single

TRENCH GATE FIELD-STOP IGBT H SE

In Stock254

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Series: H
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 115W
Switching Energy: 136µJ (on), 207µJ (off)
Input Type: Standard
Gate Charge: 81nC
Td (on/off) @ 25°C: 24.5ns/118ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
STGB40V60F
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 80A 283W D2PAK

In Stock192

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 283W
Switching Energy: 456µJ (on), 411µJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 52ns/208ns
Test Condition: 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
STGWT30H60DFB
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 260W TO3PL

In Stock378

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Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 260W
Switching Energy: 383µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
STGW8M120DF3
STMicroelectronics

Transistors - IGBTs - Single

TRENCH GATE FIELD-STOP IGBT M SE

In Stock336

More on Order

Series: M
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 32A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Power - Max: 167W
Switching Energy: 390µJ (on), 370µJ (Off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/126ns
Test Condition: 600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr): 103ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
AOK20B135D1
Alpha & Omega Semiconductor

Transistors - IGBTs - Single

IGBT 1350V 20A 340W TO-247

In Stock317

More on Order

Series: Alpha IGBT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Power - Max: 340W
Switching Energy: 1.05mJ (off)
Input Type: Standard
Gate Charge: 66nC
Td (on/off) @ 25°C: -/156ns
Test Condition: 600V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
IRG4BC40W-LPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A 160W TO262

In Stock360

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 160W
Switching Energy: 110µJ (on), 230µJ (off)
Input Type: Standard
Gate Charge: 98nC
Td (on/off) @ 25°C: 27ns/100ns
Test Condition: 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
FGH30N60LSDTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 480W TO247

In Stock330

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Power - Max: 480W
Switching Energy: 1.1mJ (on), 21mJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: 18ns/250ns
Test Condition: 400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
IKW40N60H3FKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 80A 306W TO247-3

In Stock164

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 306W
Switching Energy: 1.68mJ
Input Type: Standard
Gate Charge: 223nC
Td (on/off) @ 25°C: 19ns/197ns
Test Condition: 400V, 40A, 7.9Ohm, 15V
Reverse Recovery Time (trr): 124ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
STGW15H120F2
STMicroelectronics

Transistors - IGBTs - Single

IGBT H-SERIES 1200V 15A TO-247

In Stock386

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Power - Max: 259W
Switching Energy: 380µJ (on), 370µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 23ns/111ns
Test Condition: 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
IRGP4062DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 48A 250W TO247AC

In Stock257

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
APT25GN120BG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 67A 272W TO247

In Stock440

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 67A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Power - Max: 272W
Switching Energy: 2.15µJ (off)
Input Type: Standard
Gate Charge: 155nC
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT25GR120S
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 75A 521W D3PAK

In Stock486

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 742µJ (on), 427µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
APT36GA60BD15
Microsemi

Transistors - IGBTs - Single

IGBT 600V 65A 290W TO-247

In Stock477

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 109A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 290W
Switching Energy: 307µJ (on), 254µJ (off)
Input Type: Standard
Gate Charge: 18nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXYH40N120C3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 70A 577W TO247

In Stock232

More on Order

Series: GenX3™, XPT™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 115A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Power - Max: 577W
Switching Energy: 3.9mJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 24ns/125ns
Test Condition: 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)
IXGH40N120C3
IXYS

Transistors - IGBTs - Single

IGBT 1200V 75A 380W TO247

In Stock358

More on Order

Series: GenX3™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Power - Max: 380W
Switching Energy: 1.8mJ (on), 550µJ (off)
Input Type: Standard
Gate Charge: 142nC
Td (on/off) @ 25°C: 17ns/130ns
Test Condition: 600V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)
APT68GA60B
Microsemi

Transistors - IGBTs - Single

IGBT 600V 121A 520W TO-247

In Stock329

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Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 121A
Current - Collector Pulsed (Icm): 202A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 520W
Switching Energy: 715µJ (on), 607µJ (off)
Input Type: Standard
Gate Charge: 298nC
Td (on/off) @ 25°C: 21ns/133ns
Test Condition: 400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT50GN120B2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 134A 543W TO-247

In Stock423

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Series: -
IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 134A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 543W
Switching Energy: 4495µJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 28ns/320ns
Test Condition: 800V, 50A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
APT50GR120B2
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 117A 694W TO247

In Stock309

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 117A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
Power - Max: 694W
Switching Energy: 2.14mJ (on), 1.48mJ (off)
Input Type: Standard
Gate Charge: 445nC
Td (on/off) @ 25°C: 28ns/237ns
Test Condition: 600V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
APT40GR120B2D30
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 88A 500W TO247

In Stock410

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 88A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Power - Max: 500W
Switching Energy: 1.38mJ (on), 906µJ (off)
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 22ns/163ns
Test Condition: 600V, 40A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
APT80GA60B
Microsemi

Transistors - IGBTs - Single

IGBT 600V 143A 625W TO247

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Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 143A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Power - Max: 625W
Switching Energy: 840µJ (on), 751µJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 23ns/158ns
Test Condition: 400V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IXGH2N250
IXYS

Transistors - IGBTs - Single

IGBT 2500V 5.5A 32W TO247

In Stock469

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 5.5A
Current - Collector Pulsed (Icm): 13.5A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Power - Max: 32W
Switching Energy: -
Input Type: Standard
Gate Charge: 10.5nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)