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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 41/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NGTD23T120F2WP
ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

In Stock326

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
NGTB20N120IHTG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 20A TO247

In Stock210

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
IRG4BC30KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 28A 100W TO220AB

In Stock301

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 600µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 60ns/160ns
Test Condition: 480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
FGA20S125P-SN00336
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1250V 20A 250W TO-3PN

In Stock352

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1250V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 250W
Switching Energy: 740µJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 153nC
Td (on/off) @ 25°C: 10ns/400ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
AIKP20N60CTAKSA1
Infineon Technologies

Transistors - IGBTs - Single

IC DISCRETE 600V TO220-3

In Stock487

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Power - Max: 156W
Switching Energy: 310µJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 18ns/199ns
Test Condition: 400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
IKB20N60TAATMA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A TO263-3

In Stock318

More on Order

Series: TrenchStop™
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Power - Max: 156W
Switching Energy: 310µJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 18ns/199ns
Test Condition: 600V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr): 41ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
FGA180N33ATTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 330V 180A 390W TO3P

In Stock203

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 180A
Current - Collector Pulsed (Icm): 450A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A
Power - Max: 390W
Switching Energy: -
Input Type: Standard
Gate Charge: 169nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
NGTD23T120F2SWK
ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

In Stock478

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
FGA6065ADF
ON Semiconductor

Transistors - IGBTs - Single

IGBT 650V 120A 306W TO3P

In Stock426

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Power - Max: 306W
Switching Energy: 2.46mJ (on), 520µJ (off)
Input Type: Standard
Gate Charge: 84nC
Td (on/off) @ 25°C: 25.6ns/71ns
Test Condition: 400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr): 110ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
GPI040A060MN-FD
Global Power Technologies Group

Transistors - IGBTs - Single

IGBT 600V 80A 231W TO3PN

In Stock137

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 231W
Switching Energy: 1.46mJ (on), 540µJ (off)
Input Type: Standard
Gate Charge: 173nC
Td (on/off) @ 25°C: 35ns/85ns
Test Condition: 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3
Supplier Device Package: TO-3PN
IRGS10B60KDTRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 22A 156W D2PAK

In Stock220

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Power - Max: 156W
Switching Energy: 140µJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 30ns/230ns
Test Condition: 400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
FGA40T65SHDF
ON Semiconductor

Transistors - IGBTs - Single

IGBT 650V 80A 268W TO-3PN

In Stock190

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Power - Max: 268W
Switching Energy: 1.22mJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 68nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr): 101ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
STGP10NB60SD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 29A 80W TO220

In Stock344

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 29A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Power - Max: 80W
Switching Energy: 600µJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 700ns/1.2µs
Test Condition: 480V, 10A, 1kOhm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IXA20I1200PB
IXYS

Transistors - IGBTs - Single

IGBT 1200V 33A 130W TO220

In Stock146

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 38A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 165W
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 47nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRG4BC40KPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 42A 160W TO220AB

In Stock148

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): 84A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Power - Max: 160W
Switching Energy: 620µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 30ns/140ns
Test Condition: 480V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
FGA30T65SHD
ON Semiconductor

Transistors - IGBTs - Single

IGBT 650V 60A 238W TO-3PN

In Stock448

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 238W
Switching Energy: 598µJ (on), 167µJ (off)
Input Type: Standard
Gate Charge: 54.7nC
Td (on/off) @ 25°C: 14.4ns/52.8ns
Test Condition: 400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr): 31.8ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
IKP20N60TAHKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 40A 166W TO220-3-1

In Stock400

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Power - Max: 166W
Switching Energy: 770µJ
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 18ns/199ns
Test Condition: 400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr): 41ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
STGWT20H60DF
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 40A 167W TO3PF

In Stock369

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 167W
Switching Energy: 209µJ (on), 261µJ (off)
Input Type: Standard
Gate Charge: 115nC
Td (on/off) @ 25°C: 42.5ns/177ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
HGTG7N60A4D
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 34A 125W TO247

In Stock376

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Power - Max: 125W
Switching Energy: 55µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 11ns/100ns
Test Condition: 390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
IXDH35N60BD1
IXYS

Transistors - IGBTs - Single

IGBT 600V 60A 250W TO247AD

In Stock186

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 70A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
Power - Max: 250W
Switching Energy: 1.6mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD (IXDH)
IXYP10N65C3D1M
IXYS

Transistors - IGBTs - Single

IGBT

In Stock240

More on Order

Series: XPT™, GenX3™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Power - Max: 53W
Switching Energy: 240µJ (on), 170µJ (off)
Input Type: Standard
Gate Charge: 18nC
Td (on/off) @ 25°C: 20ns/77ns
Test Condition: 400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr): 26ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
STGWA30H60DFB
STMicroelectronics

Transistors - IGBTs - Single

IGBT

In Stock226

More on Order

Series: HB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 260W
Switching Energy: 383µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
STGWT30HP65FB
STMicroelectronics

Transistors - IGBTs - Single

IGBT TRENCH 650V 60A TO3P

In Stock274

More on Order

Series: HB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 260W
Switching Energy: 293µJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: -/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
IKB30N65EH5ATMA1
Infineon Technologies

Transistors - IGBTs - Single

INDUSTRY 14

In Stock196

More on Order

Series: TrenchStop™ 5
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 188W
Switching Energy: 870µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 24ns/159ns
Test Condition: 400V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr): 75ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
IKB30N65ES5ATMA1
Infineon Technologies

Transistors - IGBTs - Single

INDUSTRY 14

In Stock265

More on Order

Series: TrenchStop™ 5
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 62A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 188W
Switching Energy: 560µJ (on), 320µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 17ns/124ns
Test Condition: 400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr): 75ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
FGA50S110P
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1100V 50A 300W TO3PN

In Stock447

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1100V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Power - Max: 300W
Switching Energy: -
Input Type: Standard
Gate Charge: 195nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
NGTD28T65F2WP
ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 650V DIE

In Stock372

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
IXA12IF1200PB
IXYS

Transistors - IGBTs - Single

IGBT 1200V 20A 85W TO220

In Stock298

More on Order

Series: -
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Power - Max: 85W
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
NGTB30N65IHL2WG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 70A 300W TO247

In Stock159

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 300W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: -/145ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 430ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
IRG7CH37K10EF
Infineon Technologies

Transistors - IGBTs - Single

IGBT CHIP WAFER

In Stock149

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 28ns/122ns
Test Condition: 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die