IGBTs - Single | OEMstron

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CategorySemiconductors / Transistors / IGBTs - Single

Records 3,305

Page 72/111

Part Number	Manufacturer	Description	In Stock	Series	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NGB18N40CLBT4	ON Semiconductor	Transistors - IGBTs - Single IGBT 430V 18A 115W D2PAK	In Stock472 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 430V	Current - Collector (Ic) (Max): 18A	Current - Collector Pulsed (Icm): 50A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A	Power - Max: 115W	Switching Energy: -	Input Type: Logic	Gate Charge: -	Td (on/off) @ 25°C: -	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
NGD18N40CLBT4	ON Semiconductor	Transistors - IGBTs - Single IGBT 430V 15A 115W DPAK	In Stock319 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 430V	Current - Collector (Ic) (Max): 15A	Current - Collector Pulsed (Icm): 50A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A	Power - Max: 115W	Switching Energy: -	Input Type: Logic	Gate Charge: -	Td (on/off) @ 25°C: -	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package: DPAK
NGP15N41CL	ON Semiconductor	Transistors - IGBTs - Single IGBT 440V 15A 107W TO220AB	In Stock156 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 440V	Current - Collector (Ic) (Max): 15A	Current - Collector Pulsed (Icm): 50A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A	Power - Max: 107W	Switching Energy: -	Input Type: Logic	Gate Charge: -	Td (on/off) @ 25°C: -/4µs	Test Condition: 300V, 6.5A, 1kOhm	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGP4050	Infineon Technologies	Transistors - IGBTs - Single IGBT 250V 104A 330W TO247AC	In Stock183 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 250V	Current - Collector (Ic) (Max): 104A	Current - Collector Pulsed (Icm): 208A	Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A	Power - Max: 330W	Switching Energy: 45µJ (on), 125µJ (off)	Input Type: Standard	Gate Charge: 230nC	Td (on/off) @ 25°C: 37ns/120ns	Test Condition: 180V, 30A, 5Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
STGP7NB60KD	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 14A 80W TO220	In Stock493 More on Order	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 14A	Current - Collector Pulsed (Icm): 56A	Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A	Power - Max: 80W	Switching Energy: 140µJ (off)	Input Type: Standard	Gate Charge: 32.7nC	Td (on/off) @ 25°C: 15ns/50ns	Test Condition: 480V, 7A, 10Ohm, 15V	Reverse Recovery Time (trr): 50ns	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
STGB7NB60HDT4	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 14A 80W D2PAK	In Stock148 More on Order	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 14A	Current - Collector Pulsed (Icm): 56A	Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A	Power - Max: 80W	Switching Energy: 85µJ (off)	Input Type: Standard	Gate Charge: 42nC	Td (on/off) @ 25°C: 15ns/75ns	Test Condition: 480V, 7A, 10Ohm, 15V	Reverse Recovery Time (trr): 100ns	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
STGB12NB60KDT4	STMicroelectronics	Transistors - IGBTs - Single IGBT 600V 30A 125W D2PAK	In Stock498 More on Order	Series: PowerMESH™	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 30A	Current - Collector Pulsed (Icm): 60A	Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A	Power - Max: 125W	Switching Energy: 258µJ (off)	Input Type: Standard	Gate Charge: 54nC	Td (on/off) @ 25°C: 25ns/96ns	Test Condition: 480V, 12A, 10Ohm, 15V	Reverse Recovery Time (trr): 80ns	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
IXGH60N60	IXYS	Transistors - IGBTs - Single IGBT 600V 75A 300W TO247AD	In Stock237 More on Order	Series: -	IGBT Type: PT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 75A	Current - Collector Pulsed (Icm): 200A	Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A	Power - Max: 300W	Switching Energy: 8mJ (off)	Input Type: Standard	Gate Charge: 130nC	Td (on/off) @ 25°C: 50ns/300ns	Test Condition: 480V, 60A, 2.7Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD (IXGH)
IRGB4B60KPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 63W TO220A	In Stock484 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 12A	Current - Collector Pulsed (Icm): 24A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A	Power - Max: 63W	Switching Energy: 130µJ (on), 83µJ (off)	Input Type: Standard	Gate Charge: 12nC	Td (on/off) @ 25°C: 22ns/100ns	Test Condition: 400V, 4A, 100Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGB6B60KPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W TO220AB	In Stock435 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 13A	Current - Collector Pulsed (Icm): 26A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A	Power - Max: 90W	Switching Energy: 110µJ (on), 135µJ (off)	Input Type: Standard	Gate Charge: 18.2nC	Td (on/off) @ 25°C: 25ns/215ns	Test Condition: 400V, 5A, 100Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGSL4B60KD1PBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W TO262	In Stock414 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 11A	Current - Collector Pulsed (Icm): 22A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A	Power - Max: 63W	Switching Energy: 73µJ (on), 47µJ (off)	Input Type: Standard	Gate Charge: 12nC	Td (on/off) @ 25°C: 22ns/100ns	Test Condition: 400V, 4A, 100Ohm, 15V	Reverse Recovery Time (trr): 93ns	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package: TO-262
IRGB4B60KD1PBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W TO220AB	In Stock353 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 11A	Current - Collector Pulsed (Icm): 22A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A	Power - Max: 63W	Switching Energy: 73µJ (on), 47µJ (off)	Input Type: Standard	Gate Charge: 12nC	Td (on/off) @ 25°C: 22ns/100ns	Test Condition: 400V, 4A, 100Ohm, 15V	Reverse Recovery Time (trr): 93ns	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGS6B60KPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK	In Stock324 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 13A	Current - Collector Pulsed (Icm): 26A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A	Power - Max: 90W	Switching Energy: 110µJ (on), 135µJ (off)	Input Type: Standard	Gate Charge: 18.2nC	Td (on/off) @ 25°C: 25ns/215ns	Test Condition: 400V, 5A, 100Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
IRGB8B60KPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 167W TO220AB	In Stock412 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): 26A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A	Power - Max: 167W	Switching Energy: 160µJ (on), 160µJ (off)	Input Type: Standard	Gate Charge: 18.2nC	Td (on/off) @ 25°C: 23ns/140ns	Test Condition: 400V, 5A, 100Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGS4B60KD1PBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W D2PAK	In Stock331 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 11A	Current - Collector Pulsed (Icm): 22A	Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A	Power - Max: 63W	Switching Energy: 73µJ (on), 47µJ (off)	Input Type: Standard	Gate Charge: 12nC	Td (on/off) @ 25°C: 22ns/100ns	Test Condition: 400V, 4A, 100Ohm, 15V	Reverse Recovery Time (trr): 93ns	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
IRGSL6B60KDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W TO262	In Stock261 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 13A	Current - Collector Pulsed (Icm): 26A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A	Power - Max: 90W	Switching Energy: 110µJ (on), 135µJ (off)	Input Type: Standard	Gate Charge: 18.2nC	Td (on/off) @ 25°C: 25ns/215ns	Test Condition: 400V, 5A, 100Ohm, 15V	Reverse Recovery Time (trr): 70ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package: TO-262
IRGS8B60KPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 167W D2PAK	In Stock194 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 28A	Current - Collector Pulsed (Icm): 34A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A	Power - Max: 167W	Switching Energy: 160µJ (on), 160µJ (off)	Input Type: Standard	Gate Charge: 29nC	Td (on/off) @ 25°C: 23ns/140ns	Test Condition: 400V, 8A, 50Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
IRG4BC15MDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 14A 49W TO220AB	In Stock419 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 14A	Current - Collector Pulsed (Icm): 28A	Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8.6A	Power - Max: 49W	Switching Energy: 320µJ (on), 1.93mJ (off)	Input Type: Standard	Gate Charge: 46nC	Td (on/off) @ 25°C: 21ns/540ns	Test Condition: 480V, 8.6A, 75Ohm, 15V	Reverse Recovery Time (trr): 28ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGIB7B60KDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 39W TO220FP	In Stock160 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 12A	Current - Collector Pulsed (Icm): 24A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A	Power - Max: 39W	Switching Energy: 160µJ (on), 160µJ (off)	Input Type: Standard	Gate Charge: 29nC	Td (on/off) @ 25°C: 23ns/140ns	Test Condition: 400V, 8A, 50Ohm, 15V	Reverse Recovery Time (trr): 95ns	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220AB Full-Pak
IRG4BC20MDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 18A 60W TO220AB	In Stock208 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 18A	Current - Collector Pulsed (Icm): 36A	Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A	Power - Max: 60W	Switching Energy: 410µJ (on), 2.03mJ (off)	Input Type: Standard	Gate Charge: 39nC	Td (on/off) @ 25°C: 21ns/463ns	Test Condition: 480V, 11A, 50Ohm, 15V	Reverse Recovery Time (trr): 37ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRGS10B60KDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 22A 156W D2PAK	In Stock291 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 22A	Current - Collector Pulsed (Icm): 44A	Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A	Power - Max: 156W	Switching Energy: 140µJ (on), 250µJ (off)	Input Type: Standard	Gate Charge: 38nC	Td (on/off) @ 25°C: 30ns/230ns	Test Condition: 400V, 10A, 47Ohm, 15V	Reverse Recovery Time (trr): 90ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package: D2PAK
IRGSL14C40LPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 430V 20A 125W TO262AA	In Stock291 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 430V	Current - Collector (Ic) (Max): 20A	Current - Collector Pulsed (Icm): -	Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A	Power - Max: 125W	Switching Energy: -	Input Type: Logic	Gate Charge: 27nC	Td (on/off) @ 25°C: 900ns/6µs	Test Condition: -	Reverse Recovery Time (trr): -	Operating Temperature: -40°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package: TO-262
IRGB5B120KDPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 12A 89W TO220AB	In Stock261 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 12A	Current - Collector Pulsed (Icm): 24A	Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A	Power - Max: 89W	Switching Energy: 390µJ (on), 330µJ (off)	Input Type: Standard	Gate Charge: 25nC	Td (on/off) @ 25°C: 22ns/100ns	Test Condition: 600V, 6A, 50Ohm, 15V	Reverse Recovery Time (trr): 160ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3	Supplier Device Package: TO-220AB
IRG4PH40UD-EPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 41A 160W TO247-3	In Stock169 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 41A	Current - Collector Pulsed (Icm): 82A	Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A	Power - Max: 160W	Switching Energy: 1.8mJ (on), 1.93mJ (off)	Input Type: Standard	Gate Charge: 86nC	Td (on/off) @ 25°C: 46ns/97ns	Test Condition: 800V, 21A, 10Ohm, 15V	Reverse Recovery Time (trr): 63ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IRGP20B120U-EP	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 300W TO247AD	In Stock235 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 40A	Current - Collector Pulsed (Icm): 120A	Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A	Power - Max: 300W	Switching Energy: 850µJ (on), 425µJ (off)	Input Type: Standard	Gate Charge: 169nC	Td (on/off) @ 25°C: -	Test Condition: 600V, 20A, 5Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD
IRGP20B120UD-EP	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 300W TO247AD	In Stock339 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 40A	Current - Collector Pulsed (Icm): 120A	Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A	Power - Max: 300W	Switching Energy: 850µJ (on), 425µJ (off)	Input Type: Standard	Gate Charge: 169nC	Td (on/off) @ 25°C: -	Test Condition: 600V, 20A, 5Ohm, 15V	Reverse Recovery Time (trr): 300ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AD
IRG4PC60U-PPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 75A 520W TO247AC	In Stock117 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 75A	Current - Collector Pulsed (Icm): 300A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A	Power - Max: 520W	Switching Energy: 280µJ (on), 1.1mJ (off)	Input Type: Standard	Gate Charge: 310nC	Td (on/off) @ 25°C: 39ns/200ns	Test Condition: 480V, 40A, 5Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IRG4PC50UD-EPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 55A 200W TO247-3	In Stock344 More on Order	Series: -	IGBT Type: -	Voltage - Collector Emitter Breakdown (Max): 600V	Current - Collector (Ic) (Max): 55A	Current - Collector Pulsed (Icm): 220A	Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A	Power - Max: 200W	Switching Energy: 990µJ (on), 590µJ (off)	Input Type: Standard	Gate Charge: 180nC	Td (on/off) @ 25°C: 46ns/140ns	Test Condition: 480V, 27A, 5Ohm, 15V	Reverse Recovery Time (trr): 50ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247AC
IRGPS40B120UPBF	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 595W SUPER247	In Stock491 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 80A	Current - Collector Pulsed (Icm): 160A	Vce(on) (Max) @ Vge, Ic: 3.71V @ 15V, 50A	Power - Max: 595W	Switching Energy: 1.4mJ (on), 1.65mJ (off)	Input Type: Standard	Gate Charge: 340nC	Td (on/off) @ 25°C: -	Test Condition: 600V, 40A, 4.7Ohm, 15V	Reverse Recovery Time (trr): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-274AA	Supplier Device Package: SUPER-247™ (TO-274AA)
IRGPS40B120UDP	Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 595W SUPER247	In Stock259 More on Order	Series: -	IGBT Type: NPT	Voltage - Collector Emitter Breakdown (Max): 1200V	Current - Collector (Ic) (Max): 80A	Current - Collector Pulsed (Icm): 160A	Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A	Power - Max: 595W	Switching Energy: 1.4mJ (on), 1.65mJ (off)	Input Type: Standard	Gate Charge: 340nC	Td (on/off) @ 25°C: -	Test Condition: 600V, 40A, 4.7Ohm, 15V	Reverse Recovery Time (trr): 180ns	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-274AA	Supplier Device Package: SUPER-247™ (TO-274AA)

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