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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 80/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT13GP120KG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 41A 250W TO220

In Stock301

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Power - Max: 250W
Switching Energy: 114µJ (on), 165µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 9ns/28ns
Test Condition: 600V, 13A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT15GN120KG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 45A 195W TO220

In Stock330

More on Order

Series: POWER MOS 7®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 195W
Switching Energy: 410µJ (on), 950µJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 10ns/150ns
Test Condition: 800V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT15GP60KG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 56A 250W TO220

In Stock230

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 56A
Current - Collector Pulsed (Icm): 65A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Power - Max: 250W
Switching Energy: 130µJ (on), 121µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 8ns/29ns
Test Condition: 400V, 15A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT15GP90BG
Microsemi

Transistors - IGBTs - Single

IGBT 900V 43A 250W TO247

In Stock116

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 43A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Power - Max: 250W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 60nC
Td (on/off) @ 25°C: 9ns/33ns
Test Condition: 600V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT15GP90KG
Microsemi

Transistors - IGBTs - Single

IGBT 900V 43A 250W TO220

In Stock349

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 43A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Power - Max: 250W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 60nC
Td (on/off) @ 25°C: 9ns/33ns
Test Condition: 600V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT15GT60KRG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 42A 184W TO220

In Stock194

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 184W
Switching Energy: 150µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 6ns/105ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT20GF120BRDQ1G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 36A 200W TO247

In Stock221

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Power - Max: 200W
Switching Energy: 895µJ (on), 840µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 10ns/120ns
Test Condition: 800V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT20GF120BRG
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 32A 200W TO247

In Stock192

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Power - Max: 200W
Switching Energy: 2.7mJ
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 17ns/105ns
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT20GN60BG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 40A 136W TO247

In Stock461

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Power - Max: 136W
Switching Energy: 230µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 9ns/140ns
Test Condition: 400V, 20A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT20GT60BRG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 43A 174W TO247

In Stock170

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 43A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 174W
Switching Energy: 215µJ (on), 245µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 8ns/80ns
Test Condition: 400V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT25GP90BG
Microsemi

Transistors - IGBTs - Single

IGBT 900V 72A 417W TO247

In Stock458

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 72A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Power - Max: 417W
Switching Energy: 370µJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 13ns/55ns
Test Condition: 600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT30GT60KRG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 64A 250W TO220

In Stock247

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 250W
Switching Energy: 525µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 12ns/225ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
APT33GF120LRDQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 1200V 64A 357W TO264

In Stock318

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Power - Max: 357W
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 14ns/185ns
Test Condition: 800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
APT40GP60BG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 100A 543W TO247

In Stock156

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Power - Max: 543W
Switching Energy: 385µJ (on), 352µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: 20ns/64ns
Test Condition: 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT40GP90B2DQ2G
Microsemi

Transistors - IGBTs - Single

IGBT 900V 101A 543W TMAX

In Stock400

More on Order

Series: POWER MOS 7®
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 101A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Power - Max: 543W
Switching Energy: 795µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 14ns/90ns
Test Condition: 600V, 40A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
APT75GN60B2DQ3G
Microsemi

Transistors - IGBTs - Single

IGBT 600V 155A 536W TO264

In Stock106

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 155A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Power - Max: 536W
Switching Energy: 2500µJ (on), 2140µJ (off)
Input Type: Standard
Gate Charge: 485nC
Td (on/off) @ 25°C: 47ns/385ns
Test Condition: 400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: -
FGPF30N30
ON Semiconductor

Transistors - IGBTs - Single

IGBT 300V 46W TO220F

In Stock170

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
Power - Max: 46W
Switching Energy: -
Input Type: Standard
Gate Charge: 39nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
FGPF90N30
ON Semiconductor

Transistors - IGBTs - Single

IGBT 300V 56.8W TO220F

In Stock415

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 30A
Power - Max: 56.8W
Switching Energy: -
Input Type: Standard
Gate Charge: 93nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
FGPF7N60LSDTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 14A 45W TO220F

In Stock428

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 21A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Power - Max: 45W
Switching Energy: 270µJ (on), 3.8mJ (off)
Input Type: Standard
Gate Charge: 24nC
Td (on/off) @ 25°C: 120ns/410ns
Test Condition: 300V, 7A, 470Ohm, 15V
Reverse Recovery Time (trr): 65ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
FGPF120N30TU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 300V 120A 60W TO220F

In Stock170

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
Power - Max: 60W
Switching Energy: -
Input Type: Standard
Gate Charge: 112nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
STGP19NC60WD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 40A 125W TO220

In Stock301

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Power - Max: 125W
Switching Energy: 81µJ (on), 125µJ (off)
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 25ns/90ns
Test Condition: 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr): 31ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IXRH40N120
IXYS

Transistors - IGBTs - Single

IGBT 1200V 55A 300W TO247AD

In Stock354

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 300W
Switching Energy: 3mJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 35A, 15Ohm, 15V
Reverse Recovery Time (trr): 2.1µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
FGPF30N30DTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 300V 46W TO220F

In Stock366

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
Power - Max: 46W
Switching Energy: -
Input Type: Standard
Gate Charge: 39nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 21ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
FIO50-12BD
IXYS

Transistors - IGBTs - Single

IGBT 1200V 50A 200W I4PAC5

In Stock112

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Power - Max: 200W
Switching Energy: 4.6mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 30A, 39Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
IXDT30N120
IXYS

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO268AA

In Stock147

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
Power - Max: 300W
Switching Energy: -
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
IXEH25N120
IXYS

Transistors - IGBTs - Single

IGBT 1200V 36A 200W TO247AD

In Stock168

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 200W
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 20A, 68Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
IXEH25N120D1
IXYS

Transistors - IGBTs - Single

IGBT 1200V 36A 200W TO247AD

In Stock340

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 200W
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 20A, 68Ohm, 15V
Reverse Recovery Time (trr): 130ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
IXEH40N120
IXYS

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO247AD

In Stock111

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Power - Max: 300W
Switching Energy: 6.1mJ (on), 3mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
IXEH40N120D1
IXYS

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO247AD

In Stock421

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Power - Max: 300W
Switching Energy: 6.1mJ (on), 3mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr): 180ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
IXER60N120
IXYS

Transistors - IGBTs - Single

IGBT 1200V 95A 375W ISOPLUS247

In Stock387

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 95A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Power - Max: 375W
Switching Energy: 7.2mJ (on), 4.8mJ (off)
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 60A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™