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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 86/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4RC20FPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 22A 66W DPAK

In Stock190

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 66W
Switching Energy: 190µJ (on), 920µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 26ns/194ns
Test Condition: 480V, 12A, 50Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRG4RC10KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 9A 38W DPAK

In Stock477

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 9A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Power - Max: 38W
Switching Energy: 250µJ (on), 140µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 49ns/97ns
Test Condition: 480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRGS15B60KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 31A 208W D2PAK

In Stock285

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 62A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 208W
Switching Energy: 220µJ (on), 340µJ (off)
Input Type: Standard
Gate Charge: 56nC
Td (on/off) @ 25°C: 34ns/184ns
Test Condition: 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): 92ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4BC20K-STRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 16A 60W D2PAK

In Stock451

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 32A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Power - Max: 60W
Switching Energy: 150µJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 34nC
Td (on/off) @ 25°C: 28ns/150ns
Test Condition: 480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4BC30K-STRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 28A 100W D2PAK

In Stock355

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 360µJ (on), 510µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4BC30W-STRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 23A 100W D2PAK

In Stock302

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4BC20UDSTRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 13A 60W D2PAK

In Stock115

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 52A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Power - Max: 60W
Switching Energy: 160µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 39ns/93ns
Test Condition: 480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRG4RC10UTRLPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 8.5A 38W DPAK

In Stock443

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRG4RC10UDTRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 8.5A 38W DPAK

In Stock404

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 140µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 40ns/87ns
Test Condition: 480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRG4RC10SDTRLP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 14A 38W DPAK

In Stock141

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 310µJ (on), 3.28mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 76ns/815ns
Test Condition: 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRG4RC10SDTRRP
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 14A 38W DPAK

In Stock263

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 310µJ (on), 3.28mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 76ns/815ns
Test Condition: 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
STGP8NC60K
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 15A 65W TO220

In Stock202

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Power - Max: 65W
Switching Energy: 55µJ (on), 85µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 17ns/72ns
Test Condition: 390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
STGW19NC60WD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 42A 125W TO247

In Stock108

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Power - Max: 125W
Switching Energy: 81µJ (on), 125µJ (off)
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 25ns/90ns
Test Condition: 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr): 31ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
STGW30N90D
STMicroelectronics

Transistors - IGBTs - Single

IGBT 900V 60A 220W TO247

In Stock410

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 135A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Power - Max: 220W
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 29ns/275ns
Test Condition: 900V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 152ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
STGW35NC60WD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 70A 260W TO247

In Stock222

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Power - Max: 260W
Switching Energy: 305µJ (on), 181µJ (off)
Input Type: Standard
Gate Charge: 102nC
Td (on/off) @ 25°C: 29.5ns/118ns
Test Condition: 390V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
HGT1S7N60A4DS
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 34A 125W TO263AB

In Stock194

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Power - Max: 125W
Switching Energy: 55µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 11ns/100ns
Test Condition: 390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
HGT1S12N60A4S9A
ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 54A 167W TO263AB

In Stock328

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 167W
Switching Energy: 55µJ (on), 50µJ (off)
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: 17ns/96ns
Test Condition: 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
STGW30N120KD
STMicroelectronics

Transistors - IGBTs - Single

IGBT 1200V 60A 220W TO247

In Stock499

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 20A
Power - Max: 220W
Switching Energy: 2.4mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 36ns/251ns
Test Condition: 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 84ns
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
STGB20NC60V
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 200W D2PAK

In Stock206

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 200W
Switching Energy: 220µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 31ns/100ns
Test Condition: 390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
STGD8NC60KT4
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 15A 62W DPAK

In Stock385

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Power - Max: 62W
Switching Energy: 55µJ (on), 85µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 17ns/72ns
Test Condition: 390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
IRGI4059DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT TO220AB

In Stock318

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRGI4061DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 20A 43W TO220FP

In Stock491

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 1.59V @ 15V, 11A
Power - Max: 43W
Switching Energy: 52µJ (on), 231µJ (off)
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 37ns/111ns
Test Condition: 400V, 11A, 22Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
IRGI4062DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 22A 48W TO220AB

In Stock359

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 12A
Power - Max: 48W
Switching Energy: 31µJ (on), 183µJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: 41ns/100ns
Test Condition: 400V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr): 56ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
IRGP30B120KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1200V 60A 300W TO247AC

In Stock115

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Power - Max: 300W
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Input Type: Standard
Gate Charge: 169nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): 300ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
IRGSL10B60KDPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 22A 156W TO220-3

In Stock210

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Power - Max: 156W
Switching Energy: 140µJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 30ns/230ns
Test Condition: 400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
FGA25N120FTD
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 50A 313W TO3P

In Stock478

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: 313W
Switching Energy: 340µJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 48ns/210ns
Test Condition: 600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr): 770ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
FGA90N33ATDTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 330V 90A 223W TO3P

In Stock458

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 330A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Power - Max: 223W
Switching Energy: -
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 23ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
FGA90N33ATTU
ON Semiconductor

Transistors - IGBTs - Single

IGBT 330V 90A 223W TO3P

In Stock126

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 330A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Power - Max: 223W
Switching Energy: -
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
IRG4RC10STRRPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 14A 38W DPAK

In Stock210

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Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 140µJ (on), 2.58mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 25ns/630ns
Test Condition: 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
IRGSL30B60KPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 78A 370W TO262

In Stock447

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Power - Max: 370W
Switching Energy: 350µJ (on), 825µJ (off)
Input Type: Standard
Gate Charge: 102nC
Td (on/off) @ 25°C: 46ns/185ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262