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IGBTs - Single

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CategorySemiconductors / Transistors / IGBTs - Single
Records 3,305
Page 98/111
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RJH60D2DPP-M0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 25A 27.2W TO220FL

In Stock373

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Power - Max: 34W
Switching Energy: 100µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 32ns/85ns
Test Condition: 300V, 12A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL
RJH60D3DPP-M0#T2
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 35A 30W TO220FL

In Stock130

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
Power - Max: 40W
Switching Energy: 200µJ (on), 210µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 35ns/80ns
Test Condition: 300V, 17A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL
RJH60D5DPK-00#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 75A 200W TO3P

In Stock456

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Power - Max: 200W
Switching Energy: 650µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: 50ns/135ns
Test Condition: 300V, 37A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
RJH60D5DPM-00#T1
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 75A 45W TO3PFM

In Stock491

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
Power - Max: 45W
Switching Energy: 650µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: 50ns/135ns
Test Condition: 300V, 37A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Supplier Device Package: TO-3PFM
RJH60D6DPK-00#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 80A 260W TO3P

In Stock201

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Power - Max: 260W
Switching Energy: 850µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 104nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 300V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
RJH60D7DPM-00#T1
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 90A 55W TO3PFM

In Stock472

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 55W
Switching Energy: 1.1mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 60ns/190ns
Test Condition: 300V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Supplier Device Package: TO-3PFM
RJH60F4DPQ-A0#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 60A 235.8W TO247A

In Stock414

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Power - Max: 235.8W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 45ns/85ns
Test Condition: 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247A
RJH60F5DPQ-A0#T0
Renesas Electronics America

Transistors - IGBTs - Single

IGBT 600V 80A 260.4W TO247A

In Stock369

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Power - Max: 260.4W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 53ns/105ns
Test Condition: 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247A
SKB06N60ATMA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 12A 68W TO263-3-2

In Stock431

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Power - Max: 68W
Switching Energy: 215µJ
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 25ns/220ns
Test Condition: 400V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
IGA30N60H3XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 18A 43W TO220-3

In Stock331

More on Order

Series: TrenchStop®
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 18A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 43W
Switching Energy: 1.17mJ
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: 18ns/207ns
Test Condition: 400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31 Full Pack
IHY20N135R3XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1350V 40A 310W TO247HC-3

In Stock309

More on Order

Series: TrenchStop®
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Power - Max: 310W
Switching Energy: 1.3mJ (off)
Input Type: Standard
Gate Charge: 195nC
Td (on/off) @ 25°C: -/335ns
Test Condition: 600V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3
IHY30N160R2XKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 1600V 30A 312W TO247HC-3

In Stock500

More on Order

Series: TrenchStop®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 312W
Switching Energy: 2.53mJ
Input Type: Standard
Gate Charge: 94nC
Td (on/off) @ 25°C: -/525ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3
SGP20N60HSXKSA1
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 36A 178W TO220-3

In Stock241

More on Order

Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Power - Max: 178W
Switching Energy: 690µJ
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 18ns/207ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
NGB8207ANT4G
ON Semiconductor

Transistors - IGBTs - Single

IGBT 365V 20A 165W D2PAK3

In Stock350

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 365V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
Power - Max: 165W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
TIG062E8-TL-H
ON Semiconductor

Transistors - IGBTs - Single

IGBT 400V ECH8

In Stock252

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 8V @ 3V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
STGP35N35LZ
STMicroelectronics

Transistors - IGBTs - Single

IGBT 345V 40A 176W TO220

In Stock390

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 345V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 15A
Power - Max: 176W
Switching Energy: -
Input Type: Logic
Gate Charge: 49nC
Td (on/off) @ 25°C: 1.1µs/26.5µs
Test Condition: 300V, 15A, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
STGB10NB60ST4
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 29A 80W D2PAK

In Stock349

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 29A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Power - Max: 80W
Switching Energy: 600µJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 700ns/1.2µs
Test Condition: 480V, 10A, 1kOhm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
STGW50H60DF
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 100A 360W TO247

In Stock179

More on Order

Series: -
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Power - Max: 360W
Switching Energy: 890µJ (on), 860µJ (off)
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 62ns/178ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 55ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
STGB20NC60VT4
STMicroelectronics

Transistors - IGBTs - Single

IGBT 600V 60A 200W D2PAK

In Stock292

More on Order

Series: PowerMESH™
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 200W
Switching Energy: 220µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 31ns/100ns
Test Condition: 390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
APT100GT60B2RG
Microsemi

Transistors - IGBTs - Single

IGBT 600V 148A 500W SOT247

In Stock250

More on Order

Series: Thunderbolt IGBT®
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: 500W
Switching Energy: 3.25mJ (on), 3.125mJ (off)
Input Type: Standard
Gate Charge: 460nC
Td (on/off) @ 25°C: 40ns/320ns
Test Condition: 400V, 100A, 4.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
APT102GA60B2
Microsemi

Transistors - IGBTs - Single

IGBT 600V 183A 780W TO247

In Stock397

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 183A
Current - Collector Pulsed (Icm): 307A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Power - Max: 780W
Switching Energy: 1.354mJ (on), 1.614mJ (off)
Input Type: Standard
Gate Charge: 294nC
Td (on/off) @ 25°C: 28ns/212ns
Test Condition: 400V, 62A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -
APT44GA60B
Microsemi

Transistors - IGBTs - Single

IGBT 600V 78A 337W TO-247

In Stock422

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 130A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Power - Max: 337W
Switching Energy: 409µJ (on), 258µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 16ns/84ns
Test Condition: 400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
APT44GA60BD30C
Microsemi

Transistors - IGBTs - Single

IGBT 600V 78A 337W TO247

In Stock402

More on Order

Series: POWER MOS 8™
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 130A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Power - Max: 337W
Switching Energy: 409µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 16ns/102ns
Test Condition: 400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
IRGS15B60KPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 31A 208W D2PAK

In Stock284

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Series: -
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 62A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 208W
Switching Energy: 220µJ (on), 340µJ (off)
Input Type: Standard
Gate Charge: 56nC
Td (on/off) @ 25°C: 34ns/184ns
Test Condition: 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
IRGPS4067DPBF
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 240A 750W SUPER-247

In Stock319

More on Order

Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Power - Max: 750W
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 80ns/190ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 130ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
FGD3040G2
ON Semiconductor

Transistors - IGBTs - Single

IGBT 400V 41A 150W DPAK

In Stock270

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Series: EcoSPARK®
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Power - Max: 150W
Switching Energy: -
Input Type: Logic
Gate Charge: 21nC
Td (on/off) @ 25°C: -/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
FGD3440G2
ON Semiconductor

Transistors - IGBTs - Single

IGBT 400V 26.9A 166W DPAK

In Stock365

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Series: EcoSPARK®
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): 26.9A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Power - Max: 166W
Switching Energy: -
Input Type: Logic
Gate Charge: 24nC
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
NGTB15N120IHLWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 30A 156W TO247-3

In Stock312

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 156W
Switching Energy: 560µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: -/165ns
Test Condition: 600V, 15A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
NGTB20N120IHLWG
ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 40A 192W TO247-3

In Stock129

More on Order

Series: -
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Power - Max: 192W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: -/235ns
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
AUIRGR4045DTRL
Infineon Technologies

Transistors - IGBTs - Single

IGBT 600V 12A 77W DPAK

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Series: -
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 77W
Switching Energy: 56µJ (on), 122µJ (off)
Input Type: Standard
Gate Charge: 19.5nC
Td (on/off) @ 25°C: 27ns/75ns
Test Condition: 400V, 6A, 47Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA