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AOS introduces 95mohm and 125mohm, 600V fast recovery diode aMOS5™ superjunction MOSFETs

Feb 2 2024 2024-02 Passive Components Amgis
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AOS, a leading supplier of power semiconductors and chips that integrates design, development, production and global sales, has launched two aMOS5™ 600V FRD overjunction MOSFETs. aMOS5™ is AOS's market and application proven high voltage MOSFET platform designed to meet the high efficiency and high density needs of servers, workstations, telecom rectiters, solar inverters, electric vehicle charging, motor drives and industrial power applications.

     AOS, a leading supplier of power semiconductors and chips that integrates design, development, production and global sales, has launched two aMOS5™ 600V FRD overjunction MOSFETs. aMOS5™ is AOS's market and application proven high voltage MOSFET platform designed to meet the high efficiency and high density needs of servers, workstations, telecom rectiters, solar inverters, electric vehicle charging, motor drives and industrial power applications.

 

     The design of mid - and high-power switched mode power applications (SMPS) and solar inverter systems today faces four major challenges: higher efficiency, higher density, lower system cost, and greater robustness. High-voltage superjunction MOSFETs are the primary choice for topologies such as single-phase, interlacing, dual boost, CrCM TP PFC, LLC, PSFB, and multilevel NPC/ANPC.

 

     Designed for demanding system applications, aMOS5™ provides the ideal solution for fast switching, ease of use and robustness. In power topology applications such as half-bridge or full-bridge LLC/PFSB, it is often necessary to consider abnormal conditions such as short circuit or startup, when the system is hard switched and the continuous diode is in reverse recovery state. The powerful body diode characteristics of aMOS5™ FRD MOSFET are perfect for this application. Further improve system reliability.

 

     The two products in this release AOK095A60FD (TO-247 package) and AOTF125A60FDL (TO-220F package) have a maximum on-resistance of 95mohm and 125mohm, respectively. Engineers have demonstrated that both fast recovery diodes can withstand the challenge of high di/dt at junction temperatures up to 150°C. In addition, experimental tests demonstrated that the aMOS5™FRD MOSFET solution has a significantly lower turn-off loss (Eoff) than its competitors, which helps improve system efficiency under light or moderate load conditions.

 


     Richard Zhang, Senior Marketing Director, Global Power Business and High Voltage Product Line, AOS, said: "We are introducing more aMOS5™ fast recovery diode solutions to meet the needs of traditional power supplies, photovoltaic inverters and ESS systems that require bidirectional conversion topologies. As the energy storage inverter market grows and high voltage battery packs become more widely used in AC coupled systems, the AOK095A60FD and AOTF125A60FDL will be industry leading solutions for bidirectional DC/DC and inverter /PFC applications."

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