Advanced electrically isolated gate drivers for IGBTs and SiC MOSFETs

     The STGAP3S family of gate drivers from STMicroelectronics for silicon-carbide (SiC) and IGBT power switches integrates advanced galvanic isolation technology, enhanced desaturation protection, and a versatile Miller-clamp architecture.

     The STGAP3S incorporates enhanced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, capable of withstanding a transient isolation voltage (VIOTM) of 9.6kV and exhibiting a common-mode transient immunity (CMTI) of 200V/ns. The STGAP3S improves dependability in motor drives for industrial applications, including air conditioning, factory automation, and home appliances, with its advanced isolation technology. The novel drivers are employed in power and energy applications such as charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.

     The STGAP3S product family offers various options, featuring the current capabilities of 10A and 6A. Each option is equipped with distinct Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This assists designers in identifying the optimal device that aligns with the performance specifications of their selected SiC MOSFET or IGBT power switches.

     The Desaturation protection feature provides overload and short-circuit protection for the external power switch. It allows for the adjustment of the turn-off strategy through the use of an external resistor, optimizing the protection turn-off speed while minimizing the risk of excessive overvoltage spikes. The undervoltage lockout protection feature inhibits activation when the drive voltage is below the required threshold.

     The integrated Miller Clamp architecture of the driver includes a pre-driver designed for an external N-channel MOSFET. Designers can utilize flexibility to choose an appropriate intervention speed that prevents induced turn-on and mitigates cross-conduction.

     The device variants provide options for 10A sink/source and 6A sink/source drive-current capabilities, ensuring optimal performance with the selected power switch. The desaturation-detection and UVLO thresholds are specifically optimized for IGBT or SiC technology. Two dedicated open drain diagnostic pins indicate the fault conditions of desaturation, undervoltage lockout (UVLO), and overtemperature protection. The STGAP3SXS is currently in production, housed in the SO-16W wide-body package.