Ampleon has released the performance enhancing 3rd generation silicon carbide based gallium nitride transistor

     Ampleon Semiconductor (Ampleon) has announced the launch of two new broadband silicon carbide based gallium nitride (GaN-on-SiC) high electron mobility transistors (HEMTs) with 30W CLF3H0060(S)-30 and 100W CLF3H0035(S)-100 power levels. These two high linearity devices are the first products of our recently certified 3rd generation GaN-SiC HEMT process.

     These devices provide wideband high linearity at low bias, resulting in an increased level of wideband linearity (third-order intermodulation below -32 DBC at 5dB; The value is lower than -42 DBC when the saturation power is backed back 8dB on a 2:1 bandwidth. Broadband linearity is essential for the frequency agile radios deployed in today's defense electronics, which are used to process multimode communication waveforms (from FM signals all the way up to higher-order QAM signals) and simultaneously apply adversarial channels. These demanding applications require better broadband linearity of the transistors themselves. Based on market feedback, Everon's 3rd generation GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.

     In addition, both Gen 3 transistors feature enhanced heat dissipation packages for reliable operation and provide extremely durable VSWR tolerance of up to 15:1 for 30W devices. The durability can also be extended to Class A amplifier operating modes. This is common in instrumentation applications with saturated gate conditions while maintaining linearity over a wide dynamic range within an extended frequency range. Everon's 3rd generation GAN-on-SIC HEMT transistor sets a new standard for highly linear GaN technology for broadband applications while maintaining excellent heat dissipation and durability.