Ampleon introduces "breakthrough" Si LDMOS devices with 80% efficiency in VHF and UHF applications

     Ampleon announced the addition of two new products - the BLF978P and BLF974P - to its 9th generation of high-performance 50V Si LDMOS high efficiency RF power transistors. Both products are designed for ultra-high power RF power amplifiers that deliver hundreds of kilowatts of power with high efficiency and high gain characteristics.

     In Class AB operating conditions, both power transistors offer up to 80% efficiency at 225MHz. In radio frequency systems with kilowatt output, energy efficiency is an extremely important aspect as the need for efficient thermal management is a key design consideration. Similarly, industrial and scientific applications are prioritizing thermal design as a key element in order to improve system reliability and provide energy-efficient, cost-saving RF performance.

     The high power and gain of the transistor simplifies the scaling of the amplifier, making it easy to reach the high power levels required for industrial and scientific applications. The 1,200W BLF978P and 500W BLP974P typically provide a power gain of 25dB in the frequency range from 225MHz to 700MHz.