Ampleon introduces the industry's most durable 2kW RF power LDMOS transistor

     Ampleon is now announcing the development of Advanced Rugged Technology (ART) based on its proven 9th-generation high-voltage LDMOS process technology to develop the first in a new family of RF power devices. This new process was developed to enable extremely robust transistors with operating voltages up to 65V.

     The first product to use this process, ART2K0FE, is a 2kW transistor with a frequency response of 0 to 650MHz in a gas-cavity ceramic package. Designed to withstand the harshest conditions common in industrial, scientific, and medical (ISM) applications, it can be used to drive high-power CO2 lasers, plasma generators, and some MRI systems. ART devices are suitable for these applications because they can handle standing wave ratio (VSWR) mismatches up to 65:1 at 65V, which can be encountered in CO2 lasers and plasma generators.

     Devices developed based on the ART process have a high impedance, making it easier to integrate them into products during the development phase and ensuring higher product consistency in serial production. The process also enables the developed devices to be more efficient than LDMOS competing products. This reduces the operating costs of the final application by saving input power and reducing heat. In addition, devices using this process can also achieve higher power density, which means that they can be packaged in smaller, lower cost packages, thereby reducing their board footprint and thereby reducing system costs.

     ART devices also have a high breakdown voltage, helping to ensure that they work consistently and reliably throughout their expected life. The company also guarantees a 15-year supply of these devices, allowing product designers to plan for the long term.