Ampleon launched 400W rugged Doherty RF power transistor, which expands LDMOS base station and multi carrier product line

     Ampleon has announced the BLC10G27XS-400AVT 400W asymmetric Doherty RF power transistor. The Doherty transistor is designed for base station multiccarrier applications operating in the frequency range of 2.496GHz to 2.690GHz. It uses the 9th generation 28V LDMOS process technology, which is highly respected by the industry. The Doherty transistor is manufactured in an air cavity plastic (ACP) earless SOT-1258-4 package and typically provides a 45% drain efficiency.

     The BLC10G27XS-400AVT has excellent robustness with a VSWR of up to 10:1, which is essential for base station applications where extreme power mismatches often occur. The transistor is integrated with ESD protection, has a low output capacitor that improves Doherty performance, and contains an input-output matching element internally, enabling the user to easily achieve impedance matching up to 50Ω on the PCB. The power gain specification for the BLC10G27XS-400AVT is typically 13.3dB depending on the test conditions cited. In addition, the Doherty transistor has a low thermal resistance property, which provides excellent thermal stability for demanding base station applications.

     Design support resources for BLC10G27XS-400AVT include the recommended LDMOS two-stage integrated Doherty MMIC driver BLM9D2327S-50PB and PCB layout for Doherty production test circuits. The Ampleon website provides the BLC10G27XS-400AVT data book, application notes, simulation models, and RF power transistor lifetime calculator.