Ampleon's power transistors have low thermal resistance and excellent efficiency

Nov 14 2022 2022-11 Optoelectronics Amphenol Advanced Sensors

Ampleon's CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internal pre matched RF GaN SiC HEMT power transistors, which can be used in the frequency range of 0.9 GHz to 1.4 GHz. These devices have excellent efficiency, heat resistance and robustness, and are suitable for short pulse and long pulse applications.

Ampleon's CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF gallium nitride-silicon Carbide HEMT power transistors available in the frequency range from 0.9 GHz to 1.4 GHz. These devices offer excellent efficiency, heat resistance and robustness for both short and long pulse applications.

The CLL3H0914L-700 and CLL3H0914LS-700 can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under the following conditions: VDS = 50 V; f = 1,300 MHz, the rated load power on the RF development board, using a pulsed CW RF signal.

Ampleon recommends the following drivers for each power transistor: CLF3H0060-30 for CLL3H0914L-700 and CLF3H0060S-30 for CLL3H0914LS-700

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