An electrically isolated gate driver designed for SiC MosFETs and IGBTs with DC operating voltages up to 2121V

     Texas Instruments UCC21737-Q1 Single Channel gate driver is an electrically isolated gate driver designed for use with SiC mosFETs and IGBTs at DC operating voltages up to 2121V with advanced protection features, best-in-class dynamic performance and robustness. The device has a peak source and convergent current up to ±10A.

     The input terminal is isolated from the output terminal by SiO(2) capacitor isolation technology. This feature supports working voltages up to 1.5kV(RMS) and surge immunity of 12.8kV(PK), with isolation barrier life of over 40 years. It also provides low part-to-part tilt and common-mode noise immunity (CMTI) greater than 150V/ns.

     Texas Instruments UCC21737-Q1 includes state-of-the-art protection features such as rapid overcurrent and short circuit detection, fault reporting and shunt current sensing support. It also features active Miller pliers, input and output side power UVLO to optimize switching behavior and robustness for SiC and IGBT. The ASC feature forces the power switch to be turned on when the system fails. This feature increases driver versatility and simplifies system design effort, size, and cost.