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Analog Devices ADPA7009-2 GaAs pHEMT MMIC power amplifier

Dec 8 2022 2022-12 Semiconductors Analog Devices
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Analog Devices ADPA7009-2 GaAs pHEMT MMIC power amplifier is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) 0.5W power amplifier. The device is equipped with integrated temperature compensation and on-chip power detector, and the operating frequency range is 20GHz to 54GHz

      Analog Devices ADPA7009-2 GaAs pHEMT MMIC Power amplifier is a Gallium arsenide (GaAs), pseudocrystalline High electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) 0.5W power amplifier. The device is equipped with integrated temperature compensation and on-chip power detectors and operates in the frequency range of 20GHz to 54GHz.

 

     The amplifier has a gain of 17.5dB, an output power of 28dBm at 1dB compression (OP1dB) and a typical output third-order intermodulation intercept (IP3) of 34.5dBm in the frequency range 20GHz to 35GHz. The ADPA7009-2 uses a 5V supply voltage (VDDx) requiring 850mA current. In addition, the RF input and output are internally matched and separated for easy integration into higher-level components.

 

     Most of the commonly required external passive components (AC coupled capacitors and power decoupling capacitors) are integrated to help achieve small, compact printed circuit board (PCB) placeholders. Analog Devices Inc. Adpa 7009-2 adopts a 5.00mm × 5.00mm, 24-terminal chip array small shape and is packaged in LGA_CAV.

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