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Analog Devices introduces a single pole double throw (SPDT) silicon switch

Feb 28 2023 2023-02 Semiconductors Analog Devices
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Analog Devices ADRF5023 Single pole double throw (SPDT) silicon switch is a non-reflective single pole double throw (SPDT) switch manufactured by silicon process. The ADRF5023 has an operating frequency range of 9kHz to 45GHz, 1.7dB insertion loss typical value and 42dB isolation. Pin 3mm x 3mm RoHs-compliant pad grid array (LGA) package, operating temperature range -40°C to +105°C.

Analog Devices Inc. ADRF5023 Single pole double throw (SPDT) silicon switch is a non-reflective single pole double throw (SPDT) switch manufactured by silicon process. The ADRF5023 has an operating frequency range of 9kHz to 45GHz, 1.7dB insertion loss typical value and 42dB isolation.

 

The switch has RF input power processing capabilities of 30dBm (through path), 24dBm (end path) and 30dBm (RF common port hot switching). The device has a 3.3V positive power supply and a -3.3V negative power supply. ADRF5023 also features complementary controls compatible with metal oxide semiconductor (CMOS)/low voltage transistor transistor logic (LVTTL).

 

ADRF502320 pin, 3mm × 3mm, RoHs-compliant pad grid array (LGA) package, operating temperature range from -40°C to +105°C, ADRF5023 silicon SPDT switch also uses single positive supply voltage (VDD) operation, At the same time the negative supply voltage (VSS) is connected to ground. Small signal performance is maintained under this operating condition while reducing switching characteristics, linearity, and power handling performance.

 

Applications

● Testing and instrumentation
● 5G millimeter wave cellular infrastructure
● Military Radio, Radar and Electronic Countermeasures (ECM)
● Microwave radio and Very Small Aperture Terminal (VSAT)
● Industrial scanner

 

Features

● 9kHz to 45GHz ultra-wideband frequency range
● Non-reflective design

● Low insertion loss
-   0.9dB (typical value at 18GHz)
-   1.6dB (typical value at 40GHz)
-   1.7dB (typical value at 45GHz)

● High power handling capability at 0TCASE = +85°C
-   30dB pass path
-   24dBm (termination path)
-   30dBm Hot switch (RFC port)
● 42dB high isolation (typical value at 45GHz)

● High input linearity
-   0.1dB power compression (P0.1dB) : 31dBm
-   Third order intermodulation intercept (IP3) : 53dBm

● Rf stabilization time: 3.5μs (0.1dB final RF output)
● No low frequency stray signal
● All off status control
● CMOS/LVTTL is compatible with negative control interfaces
● 20 pin 3.0mm x 3.0mm LGA package

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