Bourns Insulated Gate Bipolar Transistor (IGBT) uses advanced grooved gate field cut-off technology to better control the dynamic characteristics

Oct 25 2022 2022-10 Power Bourns

Bourns BID family IGBT discrete solutions combine MOSFET gate technology and bipolar transistor technology. The series creates a component designed for high voltage and current applications.

Bourns' BID series IGBT discrete solutions combine MOSFET gate technology and bipolar transistor technology. This series creates a component designed for high voltage and high current applications. These devices use advanced grooved gate field cut-off technology to better control the dynamic characteristics, thereby reducing collector emitter saturation voltage (VCE (sat)) and switching loss.

In addition, because TO-252, TO-247, and TO-247N packages with high thermal efficiency are used, these devices can provide lower thermal resistance (Rth (jc)), making them IGBT solutions for switching mode power supply (SMPS), uninterruptible power supply (UPS), and power factor correction (PFC) applications.

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