CISSOID introduces SiC intelligent power modules for aviation applications

     CISSOID, a leader in high-temperature semiconductor devices and power modules, announced the introduction of a three-phase silicon carbide (SiC) MOSFET Smart Power Module (IPM) based on a lightweight AlSiC Flat Baseplate. To meet the needs of natural air convection or backplane cooling in aviation and other special industrial applications. This high temperature chip and module technology platform will also greatly promote the deep integration of electric vehicle powertrain systems (motors, electronic controls and transmissions), so that their size, weight and corresponding costs are significantly reduced, and optimal energy efficiency is achieved.

     CISSOID's IPM technology platform rapidly ADAPTS to new voltage, power, and cooling requirements, greatly accelerating the design of SIC-based power converters for high efficiency and high power density. Embedded grid-level drivers solve several challenges associated with fast switching SiC transistors: for example, with negative drives and active Miller clamps (AMC) to prevent parasitic conduction; Desaturation detection (DeSAT) and soft shutdown (SSD) can quickly and safely respond to short circuit events. Undervoltage lock (UVLO) and DC bus voltage monitoring systems on gate drivers to ensure normal operation, and more.

     The new air-cooled modules (CMT-PLA3SB340AA and CMT-PLA3SB340CA) are designed for applications where liquid cooling is not possible, such as aerospace electromechanical actuators and power converters. The rated blocking voltage of the module is 1200V and the maximum continuous current is 340A. The on-resistance is only 3.25mΩ, and the switching loss is only 8.42mJ and 7.05mJ (at 600V 300A), respectively. The power module has a junction temperature rating of 175°C, while the gate driver has a rated ambient temperature of 125°C, and is cooled by an AlSiC flat baseplate for low thermal resistance and high heat resistance.

     Pierre Delatte, CTO of CISSOID, notes, "CISSOID achieves a complete integrated design of the power module and gate driver, which can be controlled by carefully adjusting the dv/dt, and optimizes IPM by quickly switching the inherent voltage overshoot, thereby minimizing switching energy losses. The module's Safe Operating Area (RBSOA) allows DC bus voltages up to 880V and peak currents up to 600A, making the application of 800V battery voltage systems absolutely safe."

     "CISSOID provides high-temperature chip and module technology that has been proven for a long time in fields such as oil drilling to meet the industry's most demanding application needs. Targeted at aviation and other special industrial applications, the new SiC smart power modules are specifically designed for the natural convection or backplane cooling required by their compact and lightweight power converters. Previously, we introduced a new liquid cooled IPM power module with Pin Fin Baseplate (CXT-PLA3SA450AA), and this time we also introduced a pin fin baseplate with higher current capability, as well as a liquid cooled IPM power module (CXT-PLA3SA550CA). To address the initial demand of the electric vehicle market. We believe that CISSOID's unique high-temperature technology platform will greatly promote the deep integration of electric vehicle powertrain systems." Dave Hutton, CEO of CISSOID.

     "In addition, CISSOID IPM smart power module in addition to the use of the most popular international SiC MOSFET chip, we also carry out in-depth cooperation with China's domestic SiC chip manufacturers, IPM modules based on Chinese SiC MOSFETs (CXT-PLA3SA550CA and CMT-PLA3SB340CA) have also been launched successively. These Chinese domestic versions of SiC IPM modules on the one hand adapt to China's domestic market demand, on the other hand also promote the common development of the domestic semiconductor industry chain." Mr Hutton added.

     Yole Development's market research report shows that since the birth of silicon power semiconductor devices, application demand has been driving the increase in junction temperature, which has reached 150 ° C. The third generation of wide band gap semiconductor devices (such as SiC) has gone through the path from emergence to maturity and full commercialization, and its unique high temperature resistance is promoting the junction temperature acceleration from the current 150 ° C to 175 ° C, and will enter 200 ° C in the future. With the unique high temperature characteristics and low switching loss advantages of SiC, this trend of increasing junction temperature will greatly change the design landscape of power systems. These high temperature, high power density applications are typical today and will appear in the future, including deeply integrated electric vehicle powertrains, multi-electric and all-electric aircraft and even electric aircraft, mobile storage charging stations and charging banks, and a variety of other electric applications where liquid cooling is severely limited.