CISSOID introduces new high-temperature gate drivers, silicon carbide devices and power modules

     CISSOID Corporation has introduced a new gate driver board optimized for 62mm silicon carbide MOSFET power modules rated at 125°C(ambient temperature). Based on CISSOID's HADES gate driver chipset, the board can also drive IGBT power modules while providing cooling space for the design of high-density power converters in automotive and industrial applications. It supports high frequency (> 100KHz) and fast silicon carbide MOSFET switches (dV/dt> 50KV/μs), thereby improving the efficiency of the power converter and reducing its size and weight.

     Designed for harsh voltage environments, the board supports drives of 1200V and 1700V power modules with isolated voltages up to 3600V(after a 50Hz, 1-minute voltage test) and a creepage distance of 14mm. Protection features such as undervoltage lock (UVLO), active Miller clamp (AMC) and desaturation detection ensure safe driving and reliable protection for the power module in the event of failure. "This new silicon carbide gate driver board is the result of years of collaboration with industry leaders in the automotive, transportation and aerospace markets. It combines CISSOID's expertise in silicon carbide devices with its long experience in designing chips and electronic systems adapted to harsh environments." Mr. Etienne Vanzieleghem, Vice President of Engineering at CISSOID.

     CISSOID also showcased the latest silicon carbide MOSFET devices and IGBT power modules. A new discrete 1200V/40mOhms silicon carbide MOSFET transistor is available in the TO-247 package and can operate in the temperature range from -55°C TO 175°C. This MOSFET has a drain to source on-resistance of 40mOhms at 25°C(junction temperature) and 75mOhms at 175°C(junction temperature). The very low switching on and off energies (1mJ and 0.4mJ, respectively) make the device ideal for efficient and compact DC-DC converters, power inverters and battery chargers. CISSOID also demonstrated two 62mm 1200V IGBT power modules with fixed currents of 200A and 300A respectively.

     CISSOID is also working on a silicon carbide MOSFET power module that will be launched in the coming months. "These new products demonstrate CISSOID's commitment to providing a comprehensive range of silicon carbon-based solutions, including transistors, modules and gate drivers, to support the industry's use of efficient, lightweight and compact power conversion products in new electric vehicle and renewable energy applications," said Dave Hutton, CEO of CISSOID. "We are working closely with Oems and auto parts suppliers to customize gate drives for the application of new silicon carbide power inverters in new energy vehicles." "He added.