Combine silicon carbide to expand Schottky diode portfolio

     United Silicon Carbide Corporation (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors, announced that it will introduce four new junction barrier Schottky (JBS) diodes to complement FET and JFET transistor products. The new UJ3D 1200V and 1700V devices feature industry-best inrush current performance and are part of UnitedSiC's third generation of SiC hybrid PiN Schottky (MPS) diodes.

     UnitedSiC's SiC SB diodes are fully optimized for power system designs requiring higher efficiency levels and ultra-fast switching speeds, and their VF x Qc Factor of quality (FoM) is at least 12 to 15 percent better than diodes from other manufacturers. The gap between the anode and cathode is greater than 8.8mm, which means that they are better suited to handle high-noise environments caused by possible voltage transients. In the case of high current, the novel PN junction architecture makes it possible to inject additional carriers. As a result, UnitedSiC diodes are able to withstand higher inrush currents (up to 12 times the rated current) than competing devices.

     The new products include a 1700V 25A rated product and three 1200V devices with current ratings of 10A, 20A and 50A. All of these SiC diodes are fully compliant with the AEC-Q101 automotive grade standard in a compact TO247-2L package and bare chip format. Applications where these new SiC diodes are most suitable include electric vehicle (EV) fast charging access points, industrial motor drives and solar inverters.

     "With the unique performance of the UJ3D1725K2, we can offer our customers reliable, space-saving and cost-effective SiC diodes that have been supported and proven by series production with higher levels of performance and quality assurance," explains Anup Bhalla, vice President of Engineering at UnitedSiC.