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Combined Silicon Carbide introduces new SiC FET devices based on fourth-generation advanced technology

Mar 10 2021 2021-03 Passive Components Qorvo US Inc.
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UnitedSiC, a leading silicon carbide (SiC) power semiconductor manufacturer, has now launched four first devices based on its fourth-generation SiC FET advanced technology platform. As the first and only 750V SiC FETs on the market today, these four fourth-generation devices achieve new levels of performance based on leading Factor of Quality (FoM), This will benefit power applications in automotive, industrial charging, telecom rectifiers, data center power factor correction (PFC) and DC-DC conversion, as well as renewable energy and energy storage.

     UnitedSiC, a leading silicon carbide (SiC) power semiconductor manufacturer, has now launched four first devices based on its fourth-generation SiC FET advanced technology platform. As the first and only 750V SiC FETs on the market today, these four fourth-generation devices achieve new levels of performance based on leading Factor of Quality (FoM), This will benefit power applications in automotive, industrial charging, telecom rectifiers, data center power factor correction (PFC) and DC-DC conversion, as well as renewable energy and energy storage.

 

     Available in both 18 mΩ and 60 Mω solutions, these four new SiC FETs offer unmatched FoM, lower on-state resistance per unit area, and low intrinsic capacitance. In hard switching applications, the fourth-generation FETs achieve the lowest RDS(on)×EOSS (mΩ·μJ), thus reducing both on-off and off-off losses. In soft switching applications, its low RDS(on)×Coss(tr) (mΩ·nF) specifications allow for lower conduction losses and higher frequencies. These devices not only exceed the performance of existing SiC MOSFETs competing products, whether operating at low temperatures of 25 ° C or high temperatures of 125 ° C, but also offer the lowest body diode VF and have excellent reverse recovery characteristics, resulting in reduced dead zone losses and improved efficiency.

 

     These new devices extend the combined silicon carbide offering to 750V, giving designers more margin and reducing their design constraints. At the same time, this increase in VDS rating also makes these FETs beneficial for 400/500V bus voltage applications. Due to extensive compatibility with ±20V and 5V Vth gate drivers, all devices can be driven with 0 to +12V gate voltages. As a result, they can be used with existing SiC MOSFETs, Si IGBTs, and Si MOSFET gate drivers.

 

     As stated by Anup Bhalla, vice President of Engineering at UniSilicon Carbide C, "From DC-DC conversion and on-board charging to power factor correction and solar inverters, these devices help engineers in a wide range of industries solve the challenges they face in meeting the highest voltage and power requirements." "We will be releasing many new fourth-generation devices over the next nine months, with further improvements in price performance, thermal efficiency and design margin." At that point, industries can expect to overcome the challenges of mass adoption and thus accelerate innovation."

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