Diodes Incorporated DMN52D0UV N channel enhanced mode MOSFET

Diodes Incorporated DMN52D0UV N-channel Enhanced Mode MOSFET is a dual-channel N-channel MOSFET designed to minimize RDS(ON) and maintain excellent switching performance. The MOSFET features low input capacitance, fast switching speed, low input/output leakage current, and a subminiature surface mount package.

DMN52D0UV MOSFET is ESD protected, lead-free, RoHS compliant, halogen-free and antimony free. The MOSFET has an extremely low gate threshold voltage and operates in the temperature range from -55°C to 150°C. Typical applications include battery management systems, power management functions, and load switches.

Features

● Dual-channel N-channel MOSFET
● Low on-resistance
● Low gate threshold voltage (1V Max)
● Low input capacitance
● Fast switching speed
● Low input/output leakage current
● Subminiature surface mount package
● ESD protection
● Lead-free
● Comply with the RoHS directive
● Free of halogens and antimony

Applications

● Battery management system
● Power management function
● Load switch

Specifications

● Drain-source voltage: 50VDSS
● Grid - source voltage: ±12VGSS
● Pulse drain current: 1.2A
● 480mA maximum continuum diode forward current
● Operating temperature range: -55°C to 150°C
● Encapsulation:
-   SOT563
● UL Flammability grade: 94V-0
● Weight:
-   0.006g