Diodes Incorporated Targets electric vehicle product applications to launch high-current TOLL MOSFETs

     Diodes introduces the space-saving, heat-efficient TOLL (PowerDI1012-8) package for metal oxide semiconductor field-effect transistors (MOSFETs). Can operate at 175°C, 100 watt grade DMTH10H1M7STLWQ and DMTH10H2M5STLWQ. In addition, The 80 watt grade DMTH8001STLWQ metal oxide semiconductor field-effect transistor (MOSFET) occupies 20% less PCB area than TO263. The product features a section outside the template that is only 2.4 mm thick. This feature makes the product the best choice for highly reliable power applications such as energy heat recovery, integral-start alternators, and DC-DC converters for electric vehicles.

     TOLL package adopts strip bonding package to achieve low package resistance and low parasitic inductance. DMTH8001STLWQ, DMTH10H1M7STLWQ and DMTH10H2M5STLWQ can generate typical on-off resistors of 1.3mΩ, 1.4mΩ and 1.68mΩ under the 10 W gate driver. In addition, low parasitic inductance can improve the performance of EMI circuits.

     Because the welding area is 50% higher than TO263, the TOLL package can make the thermal impedance of the interface up to 0.65°C/W, the MOSFET can handle up to 270A current. The tinned trapezoidal groove lead ingot facilitates the automatic optical inspection (AOI) process. Metal oxide semiconductor field-effect transistors (MOSFETs) are manufactured to AEC-Q101 grade specifications in IATF 16949 certified facilities and support PPAP documentation.