Diodes New MOSFET gate drivers improve conversion efficiency

     Diodes Incorporated introduced a pair of 1A rated 40V compact gate drivers, the ZXGD3009E6 and ZXGD3009DY, designed to control on-board and embedded power supplies and motor drive circuits for high current power MOSFETs. The ZXGD3009E6 (in SOT26 package) and ZXGD3009DY (in SOT363 package) reduce the switching time of the MOSFET, helping to minimize switching losses, improve power density, and increase overall conversion efficiency.

     The new driver acts as a high-gain buffer stage for a low-power control IC and is capable of delivering a typical drive current of 500mA from an input current of only 10mA, enabling fast charging and discharging of power MOSFET capacitive loads. The driver has an overspeed switch and provides a transfer delay time of less than 5ns and a lift time of less than 20ns.

     The two ZXGD3009 series products independently control the MOSFET switching time through separate pumping, so that the MOSFET working mode can better meet the needs of the application. The device can drive the gate with positive and negative voltages to ensure the reliability of hard shutdown of the power MOSFET.

     The new gate driver has a robust emitter follower to prevent latching and breakdown and can withstand peak currents up to 2A. The wide operating voltage range of 40V offered by both products, combined with the power MOSFET gate drive, also enables them to handle voltage spikes far beyond the 12V voltage typically found in power MOSFET gate drives.