Diodes introduces the first in a new generation of discrete MOSFETs

     Diodes Incorporated announced the launch of the first product in a new generation of discrete MOSFETs. The DMN3012LEG offers greater efficiency in a smaller package, resulting in considerable cost, power and space savings in a variety of power conversion and control applications.

     Compared to typical two-chip solutions, the DMN3012LEG integrates dual MOSFETs in a single package measuring just 3.3mm x 3.3mm and reduces board space requirements by up to 50%. This space-saving advantage is a range of applications that use point of Load (PoL) and power management modules. The DMN3012LEG can be used in DC-DC synchronous buck converters and half-bridge power topologies to reduce the size of power converter solutions.

     The 3D structure of the PowerDI®3333-8Type D package helps improve overall power efficiency, while the high voltage and current ratings make it widely used. The fully grounded pad design has good heat dissipation performance, thus enabling the overall solution to operate at lower temperatures. The high switching speed and efficiency of the processes used also minimizes the need for large inductors and capacitors.

     The DMN3012LEG integrates two n-channel enhanced mode MOSFETs, making it ideal for synchronous buck converter designs. Using the transverse diffusion MOS (LDMOS) process, it combines the fast on and off delay speeds of 5.1nS and 6.4nS for Q1 and 4.4nS and 12.4ns for Q2. The device's maximum on-resistance (RDS (ON)) value is only 12 Mω at Vgs = 5V for Q1 and only 6 Mω at Vgs = 5V for Q2. The DMN3012LEG can accept 30V drain-source voltage from 10V grid-source, while supporting 5V gate drive.