Diodes introduces the industry's first automotive-grade 40V dual MOSFET

     Diodes Incorporated announced the introduction of the industry's first automotive-grade 40V dual MOSFETs in a 3.3mm x 3.3mm package. From electric seat control to advanced driver assistance systems (ADAS), the DMT47M2LDVQ can replace two discrete MOSFETs to reduce board space in many automotive applications.

     Ian Moulding, Automotive Market Manager at Diodes Incorporated, said, "The rapid growth in the electronic content of vehicles over the past decade has spurred the need for continuous innovation. "Our response to this demand extends our reputation as a trusted supplier to the automotive industry."

     "Diodes has had six straight years of double-digit growth in this market," Moulding continued. "The DMT47M2LDVQ is an example of how we are helping the automotive industry meet the technical and commercial challenges it faces in developing the next generation of vehicles."

     The DMT47M2LDVQ integrates two N-channel enhanced mode MOSFETs and the industry's lowest RDS (ON) for this configuration - just 10.9mΩ at 10V VGS and 30.2A ID. This low on-resistance minimizes conduction losses in applications such as wireless charging or motor control. With a VGS of 10V and an ID of 20A, the typical gate charge is 14.0nC, ensuring a minimum of switching losses.

     The DMT47M2LDVQ's high-efficiency thermal PowerDI®3333-8 package features a junction to enclosure thermal resistance (Rthjc) of 8.43°C/W, making it possible to develop end-use applications with higher power densities than MOSFETs packaged separately. This reduces the PCB area required to implement automotive functions, including ADAS.