Diodes produced the first silicon carbide Schottky barrier diode

Diodes announced the release of the first silicon Carbide (SiC) Schottky Barrier diode (SBD). The product portfolio includes the DIODES DSCxxA065 series with eleven 650V rated products (4A, 6A, 8A, and 10A) and the DIODES DSCxx120 series with eight 1200V rated products (2A, 5A, and 10A).

The benefits of these wide-gap SBDS include significantly improved efficiency and high temperature reliability, while responding to market demands to reduce system execution costs and reduce maintenance requirements. These units are suitable for AC-DC, DC-DC and DC-AC step-down converters, photovoltaic inverters, continuously charged systems and industrial motor driven product applications. In addition, this series of devices are also suitable for a variety of other circuits, such as power factor correction for boost converters.

These SiC devices are highly efficient and outperform traditional silicon products, giving power supply designers unprecedented product performance advantages, such as:

● Low capacitive charge (QC) can reduce the switching loss to very low, and improve the efficiency of high-speed switching products. It is suitable for circuit design with high power density and small total solution size.

● Low forward voltage (VF) can further improve efficiency, reduce power loss and operating costs.

● Reduce heat dissipation, help to reduce the heat dissipation budget of the whole system.

● High surge current capability can improve stability, achieve better system reliability, and excellent thermal efficiency can also reduce construction costs.

This family of units is available in three package options, including surface adhesive TO252-2 (WX model), through-hole TO220AC (WX model) and ITO220AC (WX-NC model).