Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Domestic silicon carbide substrate shipments have increased significantly, and the market share has increased significantly

Dec 5 2024 2024-12 Semiconductors Abracon
Article Cover
In the past year, the domestic silicon carbide industry has experienced rapid development. From the recently held 2024 wide bandgap semiconductor advanced technology innovation and application development Summit Forum, the reporter was informed that in 2023 China's silicon carbide substrate material equivalent to 6-inch wafers, shipments have reached 894,000 pieces, a surge of 297.9% compared to 2022.

     In recent years, with the rapid development of new energy vehicles and 5G communication technology, the demand for high-performance semiconductor materials has been growing. In the past year, the domestic silicon carbide industry has experienced rapid development. From the recently held 2024 wide bandgap semiconductor advanced technology innovation and application development Summit Forum, the reporter was informed that in 2023 China's silicon carbide substrate material equivalent to 6-inch wafers, shipments have reached 894,000 pieces, a surge of 297.9% compared to 2022. It is estimated that China's silicon carbide substrate production capacity in 2023 has accounted for 42% of the global capacity, and it is expected that by 2026 China's silicon carbide substrate production capacity will reach 50% of the global capacity.

 

     Silicon carbide (SiC) substrate, as the core of the third generation semiconductor material, has attracted much attention because of its excellent performance in high frequency, high temperature and high pressure environment. However, the global production of silicon carbide substrate has long been subject to factors such as slow growth rate and complex process, resulting in limited production capacity. Recently, with the large-scale expansion of core suppliers such as Cree (now Wolfspeed), II-VI, and the production capacity release of China's SAN 'a Photoelectric, Tianke Heda and other enterprises, SiC application is expected to accelerate the popularity, and domestic silicon carbide substrate is expected to occupy half of the country, providing a solid foundation for China's new energy and 5G construction.

 

     Silicon carbide (SiC) substrate is the basis of gallium nitride (GaN) and silicon carbide power devices. Although the scale application of gallium nitride as a substrate still faces challenges, its application in the field of communication radio frequency continues to expand. In contrast, silicon carbide materials are increasingly used in power devices because of their excellent electron mobility and high voltage resistance. Especially in the field of new energy vehicles, charging piles and other new energy, the demand for efficient, high-frequency, high temperature resistant silicon carbide power devices has surged, promoting the rapid development of the industry. In the face of huge market demand, domestic and foreign enterprises have increased investment to expand the production capacity of silicon carbide substrate. International giants such as Wolfspeed and II-VI continue to consolidate their market leadership through capacity expansion and technological innovation. Wolfspeed's Mohawk Valley plant in New York, for example, is already in production and is expected to reach 720,000 tablets per year by 2023-2024.

 

     In addition, domestic enterprises Tianke Heda and Tianyue Advanced are also accelerating the construction of production lines, and it is expected that by the end of 2025, Tianke Heda's 6-inch effective production capacity will reach 550,000 pieces/year. Although international players currently dominate the silicon carbide substrate market, Chinese companies are catching up. In addition to capacity expansion, technological breakthroughs are also key. The epitaxial equipment plays an important role in the preparation of SIC substrate. In the past, this field was mainly monopolized by four leading foreign enterprises.

 

     However, with the breakthrough of Chinese enterprises such as NAult in silicon carbide epitaxial furnace technology, the market share of domestic equipment is expected to increase. Naura's SiC epitaxial furnaces have achieved mass production, and the cumulative number of orders has exceeded 100 units by September 2022; The company has also started the development of epitaxial production equipment and is expected to deliver a prototype for production verification in 2023.

 

     The rapid growth of the silicon carbide substrate market has provided a huge development space for domestic enterprises. With the advancement of technology and the improvement of production capacity, domestic silicon carbide substrate is expected to significantly increase its market share in the next few years, especially in the new energy and 5G construction applications will be more extensive. This will not only help reduce the dependence on external supply chains, but also promote the overall competitiveness of China's semiconductor industry.

 

     The rise of domestic silicon carbide substrate marks a solid step in the field of third-generation semiconductor materials in China. Under the background of increasingly fierce competition in the global silicon carbide substrate market, Chinese enterprises are gradually narrowing the gap with international giants through technological innovation and capacity expansion. It is expected that in the future, with the further reduction of the cost of silicon carbide substrate and the improvement of performance, domestic silicon carbide substrate will play an increasingly important role in the construction of new energy and 5G, and inject new vitality into the development of China's semiconductor industry.

The Products You May Be Interested In

CAR2548DCXXXZ01A CAR2548DCXXXZ01A DC/DC CONVERTER 48V 2500W 498

More on Order

AXH010A0YZ AXH010A0YZ DC DC CONVERTER 1.8V 18W 202

More on Order

AXH010A0Y93-SR AXH010A0Y93-SR DC DC CONVERTER 1.8V 18W 404

More on Order

AXA010A0G93-SRZ AXA010A0G93-SRZ DC DC CONVERTER 2.5V 25W 481

More on Order

AXA010A0A3Z AXA010A0A3Z DC DC CONVERTER 1.2-5.5V 55W 355

More on Order

JNCW450R41-18Z JNCW450R41-18Z DC DC CONVERTER 32V 450W 428

More on Order

HW010A0F1-SR HW010A0F1-SR DC DC CONVERTER 3.3V 33W 358

More on Order

EHHD020A0F41-SZ EHHD020A0F41-SZ DC DC CONVERTER 3.3V 66W 215

More on Order

EQW010A0B1Z EQW010A0B1Z DC DC CONVERTER 12V 120W 216

More on Order

EHW007A0B41-HZ EHW007A0B41-HZ DC DC CONVERTER 12V 84W 356

More on Order

QRW025A0Y4 QRW025A0Y4 DC DC CONVERTER 1.8V 45W 431

More on Order

QBK025A0B1 QBK025A0B1 DC DC CONVERTER 12V 300W 169

More on Order

LW015B9 LW015B9 DC DC CONVERTER 12V 15W 444

More on Order

HW025FG HW025FG DC DC CONVERTER 3.3V 2.5V 25W 241

More on Order

FW250A1 FW250A1 DC DC CONVERTER 5V 250W 348

More on Order

ATH010A0X3 ATH010A0X3 DC DC CONVERTER 0.8-3.6V 36W 103

More on Order

QBVW033A0B641-HZ QBVW033A0B641-HZ DC DC CONVERTER 12V 400W 499

More on Order

QBVW025A0B61-HZ QBVW025A0B61-HZ DC DC CONVERTER 12V 300W 409

More on Order

QBVW025A0B61Z QBVW025A0B61Z DC DC CONVERTER 12V 300W 488

More on Order

ERCW003A6R41Z ERCW003A6R41Z DC DC CONVERTER 28V 145

More on Order

KHHD010A0F41-SRZ KHHD010A0F41-SRZ DC DC CONVERTER 3.3V 33W 291

More on Order

EQW020A0F1Z EQW020A0F1Z DC DC CONVERTER 3.3V 66W 264

More on Order

PJT020A0X43-SRZ PJT020A0X43-SRZ DC DC CONVERTER 0.51-3.63V 718

More on Order

AXH005A0XZ AXH005A0XZ DC DC CONVERTER 0.8-3.6V 18W 1616

More on Order