EPC and ADI jointly launch a DC/DC converter based on GaN FET

     EPC Company and ADI Company launched a reference design, using a new fully optimized analog controller to drive EPC Company's GaN FET. A new analog LTC7890 synchronous GaN step-down controller and EPC's ultra efficient eGaN   The combination of FET can realize switching frequency up to 2 MHz, thus realizing high power density and low-cost DC/DC conversion. 

     EPC announced the introduction of EPC9160, which is a reference design of dual output synchronous step-down converter. The switching frequency is 2 MHz, which can convert the input voltage of 9 V~24 V into the output voltage of 3.3 V or 5 V. The continuous current of the two outputs can be as high as 15 A. Due to the high switching frequency, the size of the converter is very small, both outputs are only 23 mm x 22 mm and the thickness of the inductor is only 3 mm.

     With high power density, slim and switching frequency of 2 MHz, this solution is an ideal choice for automotive console applications and computing, industrial, consumer and telecommunications power systems that require small, slim solutions. With the advantages of fast switching, high efficiency and small size, eGaN FETs can meet the strict requirements of these cutting-edge applications for high power density. The EPC9160 reference design uses an enhanced GaN FET (EPC2055) and a two-phase analog step-down controller with a GaN integrated driver (LTC7890).

     The 100V synchronous step-down controller (LTC7890) with low Iq, dual circuit and two-phase is fully optimized to drive the EPC company's eGaN FET, and integrates a half bridge driver and intelligent bootstrap diode. The optimized or programmable dead time is close to zero, and the switching frequency can reach up to 3 MHz. The quiescent current of 5 uA (VIN=48 V, VOUT=5 V, CH1 only) can achieve very low standby power consumption and excellent light load efficiency.

     The 40 V eGaN FET (EPC2055) achieves a maximum on resistance of 3 mOhm, 6.6 nC QG, 0.7 nC QGD, 1.3 nC QOSS, and zero reverse recovery (QRR) in an ultra small size (2.5 mm x 1.5 mm), and can provide a continuous current of up to 29 A and a peak current of 161 A. The superior dynamic parameters can achieve very small switching loss at 2 MHz switching frequency.

 
     The efficiency of the EPC9160 exceeds 93% at 5 V output and 24 V input. In addition to light load operation mode and adjustable dead time, the board also provides undervoltage locking, over-current protection and power good output.

     Alex Lidow, CEO of EPC, said: "Gallium nitride field-effect transistors have the advantage of ultra-low switching loss, enabling them to operate at frequencies above 2 MHz. With a new analog controller, customers can achieve an entire ecosystem of operating frequencies above 2 MHz. We are pleased to cooperate with ADI to combine the advantages of its advanced controller with the excellent performance of EPC gallium nitride devices, and provide customers with solutions with the highest power density and a small number of components Improve efficiency, increase power density and reduce system cost ".

     Tae Han, senior product marketing manager of ADI, said: "ADI's LTC7890 design can take advantage of EPC eGaN FET for high power density solutions. The LTC7890 achieves higher switching frequency and optimized dead time. Compared with existing solutions on the market, it has superior performance and lower power consumption. With these new controllers, customers can take advantage of the extreme speed switching advantages of GaN devices to achieve the highest power density."