EPC introduces (6.8 mΩ, 170 V) gallium nitride field-effect transistor

     EPC Power Conversion, a leading global supplier of enhanced silicon-based Gallium nitride (eGaN) power field effect transistors and integrated circuits, is committed to improving product performance and reducing the cost of shipped gallium nitride transistors, with the introduction of the EPC2059 (6.8 mΩ, 170 V) gallium nitride field effect transistor. It is the newest member of the 100 V to 200 V product family, which is suitable for a wide range of power levels and is available in a variety of price points to meet the market for 48 V to 56 V server and data center products and a variety of consumer power applications for high-end computing (including gaming PCS, PC, PC, etc.). LCD/LED TV and LED lighting) growing demand.

     The EPC2059 is ideal for DC/DC secondary synchronous rectification in AC/DC adapters, fast chargers, and power supply applications ranging from 100 W to 6 kW. The performance advantages of gallium nitride devices allow designers to achieve efficiencies powered by 80 Plus titanium power supplies, as well as lower system costs by enabling systems that are smaller, faster, cooler and lighter than current solutions.

     Alex Lidow, CEO and co-founder of EPC, said: "The use of gallium nitride devices for synchronous rectification on the secondary side of the AC/DC adapter provides very significant performance benefits. A 400 V/48 V converter using a gallium nitride device and switching at 1 MHz consumes one-sixth as much power as a solution using a silicon MOSFET device with equal on-resistance, and operates at a temperature 10 ° C lower, allowing designers to meet stringent energy efficiency standards in high-end computing. Applications such as artificial intelligence, cloud computing and high-end gaming systems are exploding."