EPC introduces 80V GA-Q101 certified GA-FET

     EPC introduces the 80-V AEC-Q101-certified Gallium nitride Field effect Transistor (GaN FET) EPC2252 to provide designers with a smaller and more efficient solution than silicon MosFEts for vehicle scale lidar, 48 V/12 V DC/DC conversion and low-inductance motor drivers.

     As a global leader in enhanced gallium nitride (eGaN) FETs and ics, EPC Power Conversion Corporation (EPC) has further expanded its off-the-shelf line of vehicle gauge grade gallium nitride transistors. The 80 V, 11 mΩ EPC2252 delivers 75 A pulse current in 1.5 mm x 1.5 mm packaging, which is smaller and more efficient than silicon mosFETs. Suitable for vehicle gauge lidar, 48 V/12 V DC/DC conversion and low inductance motor drivers in autonomous driving and other advanced driver assistance system applications.

     Operating at high frequencies, gallium nitride transistors have lower switching losses, lower conduction losses, zero reverse recovery losses, and lower drive power to achieve high efficiency. Combined with minimal plate area, these advantages allow for maximum power density.

     Gallium nitride transistors have the advantages of fast switching, sub-nanosecond conversion and the ability to generate large current pulses in less than 3 ns, allowing lidar to see farther and have higher resolution for autonomous driving, parking vehicles and collision avoidance.

     "The EPC2252 is the ideal switch for vehicle-gauge lidar, low-inductance motor drivers, and 48-V DC/DC conversions," said Alex Lidow, EPC co-founder and CEO. We are committed to expanding our gallium nitride product range for the automotive market to enable efficient, low-cost vehicle electrification and autonomous driving."