EPC introduces eGaN power transistors for motor control and LiDAR applications

     EPC Power Conversion Corporation (EPC) announced the launch of the 100 V EPC2052 gallium nitride field-effect transistor, which has A board area of just 2.25 square millimeters, a maximum on-impedance (RDS(on)) of 13.5 mΩ and a pulse output current of up to 74 A to support efficient power conversion.

     Applications requiring higher efficiency and higher power density do not need to choose between small size and high performance, because the EPC2052 can achieve both small size and high performance! The EPC2052 measures just 1.5 mm by 1.5 mm (2.25 square mm). Although the EPC2052 occupies A small board area, it can operate at 48 V - 12 V buck converter, 500 kHz switching frequency and 10 A output current, can achieve more than 97% efficiency! At 1 MHz, 10 A output current, more than 96% efficiency can be achieved.

     In addition, the low-cost EPC2052 is comparable to the cost of equivalent silicon MOSFETs. Applications that benefit from the EPC2052's high performance, small size and low cost include 48-V input power converters for computing and communication systems, liDAR, LED lighting and Class D audio amplifiers.

     "Gallium nitride (eGaN) devices operate at high frequencies to achieve high efficiency, widening the performance gap with equivalent silicon-based devices in terms of performance and cost," said Alex Lidow, CEO of EGAN Power Conversion. The 100 V EPC2052 gallium nitride field effect transistor is significantly smaller than the equivalent MOSFETs, and it can operate at high frequencies, allowing designers to further save board area."