EPC introduces ePower series of power level integrated circuits

     EPC announced the introduction of 80 V, 12.5A power level integrated circuits designed for 48 V DC/DC conversions for computing applications with high power density and motor drivers for electric vehicles. The product range makes it easy for designers to leverage the performance benefits of gallium nitride technology. Integrating multiple devices on a single chip makes it easier for designers to design, lay out, assemble, save board space and improve efficiency.

     EPC2152 is a single crystal driver with a half-bridge power stage based on gallium nitride field-effect transistor (eGaN® FET) using EPC's proprietary gallium nitride integrated circuit technology. Integrated input logic interface, level conversion circuit, bootstrap charging circuit, buffer circuit for gate driver and output gallium nitride field effect transistor configured as half-bridge device on a single chip, resulting in chip-scale LGA package and small form factor (3.9 mm x 2.6 mm x 0.63 mm).

     When the 48 V to 12 V buck converter operates at a 1 MHz switching frequency, the EPC2152 ePower power level integrated circuit can achieve peak efficiency of more than 96%, which is 33% less board area on the PCB than a solution with multiple discrete devices.

     The EPC2152 is the first product in the series. This series will be further introduced in the future using chip level package (CSP) and multi-chip square offset module (QFM) power level ics. Products that can operate in frequencies up to 3 to 5 MHz and with currents up to 15 A to 30 A per power stage will be introduced in the coming year.

     "The discrete power transistor is entering its final stage of development," said Alex Lidow, CEO and co-founder of IPPower Conversion. Silicon-based gallium nitride integrated circuits can achieve higher performance, occupy a smaller board area, and eliminate a lot of engineering." Alex continued, "This new family of power-level ics is the latest development in the field of gallium nitride power conversion, from integrating multiple discrete devices to more complex solutions, enabling circuit performance that is not possible with silicon-based solutions and making it easier for power system engineers to design efficient power systems."