EPC introduces monolithic gallium nitride half-bridge power transistors

     EPC announced the launch of the EPC2102(60 V) and EPC2103(80 V) enhanced monolithic gallium nitride half-bridge devices. By integrating two eGaN power field effect transistors into a single device, the connected inductance and gap between the devices on the printed circuit board can be removed, reducing the board area of the transistor by 50%. This increases efficiency (especially when the device is operating at higher frequencies) and increases power density while reducing the assembly cost of the power conversion system for the end user. Half-bridge devices are ideal for high frequency DC/DC conversion applications.

     Using the EPC2103 device in A typical buck converter, more than 97% system efficiency can be achieved at 48 V to 12 V, 500 kHz switching frequency and 20 A output current. The EPC2102 GAN half-bridge device (60 V) is the newest member of the half-bridge product family and achieves 98% system efficiency at 42 V to 14 V, 500kHz switching frequency and 18 A output current.

     The EPC9038 and EPC9039 development boards measure 2 inches by 2 inches (50.8 mm x 50.8 mm) and each board contains an EPC2102 or EPC2103 integrated half-bridge device. Both use a Texas Instruments gate driver (LM5113) and include an onboard power supply and bypass capacitor. The layout of the development board enables optimal switching performance and has multiple boreholes that make it easy for users to measure simple waveforms and calculate efficiency.