
EPC announced the launch of EPC9148 and EPC9153 demo boards for 48 V DC/DC conversion. The EPC9153 is an ultra-thin 250 W power module with a simple and low-cost synchronous buck configuration with a peak efficiency of up to 98.2% and a maximum component thickness of 6.5 mm. The EPC9148 uses a multilevel topology with a maximum component thickness of less than 4 mm and a peak efficiency of 98%.
The two demo boards integrate Microchip's dsPIC33CK digital Signal controller (DSC) and EPC's latest generation 100 V gallium nitride field-effect transistor with an ultra-thin form factor that achieves more than 98% efficiency at 12.5 A. Due to the high flexibility of Microchip digital controllers, the input voltage is allowed to be adjusted in the range of 44 V to 60 V, while the output voltage is in the range of 5 V to 20 V.
The EPC9148 multilevel converter reduces the size of modules supporting magnetic components while achieving high efficiency in a compact solution. One of the highlights of the EPC9148 demo board is the use of an ultra-thin power inductor from Wurth Elektronik, resulting in a design with ultra-high power density.
The EPC9153 demo board offers a simple and low-cost synchronous step-down configuration that allows the component to achieve a slim maximum thickness, 98.2% peak efficiency, and less than 40°C temperature rise at 20 V output. With its fast switching performance, the eGaN FET improves overall efficiency, while its chip-level footprint makes it easy to dissipate heat, resulting in the low rise temperatures required for compact designs.
Michael de Rooij, EPC's vice president of application engineering, said: "Computers, displays, smartphones and other consumer electronics systems are getting slimmer but more powerful. We are excited to partner with Microchip Technology and Wurth Elektronik to develop an ultra-thin and efficient solution to the challenge of achieving higher power in limited space and volume."
Ipp Power Conversion is a leading supplier of enhanced gallium nitride (eGaN) field-effect transistors and integrated circuits to replace power MOSFET devices. Targeted applications include DC-DC converters, wireless power transmission, envelope tracking, RF transmission, power inverters, LiDAR, and Class D audio amplifiers, with device performance many times higher than the best silicon power MOSFETs. In addition, the company is expanding its eGaN IC-based product range to provide customers with further floor space savings, energy savings and cost savings.
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