EPC announced the availability of the EPC23102EPC23102 ePower Power level GaN IC with gate driver capability and two GaN FeTs with a typical on-resistance of 5.2 mΩ. Operating at input supply voltages between 20 V and 80 V, the EPC9176 provides current up to 28 Apk(20 ARMS). This voltage range and power make the solution ideal for use in a variety of three-phase BLDC motor drive applications with 36V to 80V inputs, including electric bicycles, electric scooters, power tools, drones, robotics, DC servos, medical robots, and factory automation.
The EPC23102 integrated silicon-based GaN device delivers increased performance in a smaller footprint while reducing design effort, thereby accelerating time to market. The EPC23102 is a fully integrated power level rated at 100V that includes a half-bridge FET, driver, level converter, and synchronous bootstrap charging, and comes with an enable pin for low static current in disabled mode and 5 V bias.
EPC9176 can be used with a variety of compatible controllers, supported by major manufacturers, using existing resources for rapid development, thereby reducing the design cycle. The EPC provides an interface board (EPC9147X) so that the reference design can be operated using the most commonly used motor. The EPC9176 contains all the critical functional circuits necessary to support a motor driven inverter, including a gate driver, a regulated auxiliary power supply rail for power management, voltage and temperature detection, precise current detection, and protection functions.
"GaN IC can be used by designers to create lighter, more efficient, battery-powered motor drivers for a variety of eMobility and robotics applications," said Alex Lidow, CEO of EpP Power Conversion. Gallium nitride devices enable motor systems to be smaller, lighter, less noisy, more torque, longer endurance, and more accurate, while improving EMI, reducing EMI filters and capacitors, and eliminating electrolytic capacitors and input filter inductors."
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