EPC launched a 200V radiation resistant transistor for demanding aerospace applications to achieve ultra-low on resistance

     EPC Company announced the launch of 200 V, 25 m Ω, 80 APulsed radiation resistant GaN FET EPC7007. The size is as small as 5.76 mm2, the total dose level is greater than 1 Mrad, and the single event effect (SEE) immunity of linear energy transfer (LET) is 85 MeV/(mg/cm2). Same as commercial eGaN FET and IC series, it adopts chip level package. Packaging devices will be provided by EPC Space.

     Compared with the equivalent radiation resistant silicon device with the same conduction resistance, the QG and QGD of the EPC7007 are 40 times smaller, and the zero reverse recovery (QRR) and size are 40 times smaller. With higher breakdown strength, lower gate charge, lower switching loss, superior thermal conductivity and ultra-low on resistance, gallium nitride power devices are significantly superior to silicon based devices, which can achieve higher switching frequency. For demanding aerospace missions, gallium nitride power devices can achieve higher power density, higher efficiency, smaller and lighter circuits. Compared with silicon solutions, solutions based on GaN devices can work at higher total radiation, SEE and LET levels.

     The high-performance applications that benefit from the EPC7007 include DC/DC power supply, motor drive, laser radar, deep exploration and ion thrusters for aerospace applications, satellites and avionics.

     Alex Lidow, CEO and co-founder of EPC Company, said: "EPC's gallium nitride technology can realize a new generation of power conversion and motor drive in aerospace applications. It has higher operating frequency, higher efficiency and higher power density, which is impossible to achieve before. EPC7007 expands the voltage range of our radiation resistant product series to 200 V. Compared with silicon solutions, EPC7007 provides designers with much smaller and lower cost solutions."