EPC launches 100 V gallium nitride field-effect transistor with higher performance and lower cost

     Two 100 V eGaN FETs (EPC2218 and EPC2204) from EPC, a global leader in enhanced silica-based Gallium nitride (eGaN) power field effect transistors and integrated circuits, offer higher performance and lower cost for immediate shipping. These advanced gallium nitride devices are used in a wide range of applications, including synchronous rectifiers, Class D audio amplifiers, automotive infotainment systems, DC/DC converters (hard switches and resonators), and liDAR systems for fully autonomous vehicles, robots, and drones.

     The EPC2218 (3.2 mΩ, 231 Apulsed) and EPC2204 (6 mΩ, 125 Apulsed) offer nearly 20% lower on-resistance and higher DC power rating than the previous generation eGaN FETs. Both gallium nitride devices offer higher performance compared to benchmark silicon devices.

     The on-resistance of the EPC2204 is reduced by 25%, but the size is reduced by three times. Its gate charge (QG) is more than 50% smaller than the benchmark silicon MOSFET device and, like all eGaN FETs, has no reverse recovery charge (QRR), allowing Class D audio amplifiers to achieve lower distortion and more efficient synchronous rectifiers and motor drivers.

     Alex Lidow, CEO and co-founder of EPC, said: "We expect the price of the latest generation and superior performance of the 100 V eGaN FETs to be even higher. But the price of these state-of-the-art 100 V transistors is similar to equivalent aging devices. The advantages of our gallium nitride devices for design engineers are higher performance, smaller size, higher heat dissipation efficiency and similar cost. Gallium nitride devices are accelerating to replace power MOSFET devices."