EPC newly introduced 350V GaN power transistor, which is 20 times smaller than the equivalent silicon device and has lower cost

     GaN power transistor EPC2050 is specially designed for power system designers. In a very small chip level package, it can achieve 350 V, 80 m Ω maximum RDS (on) and 26 A peak current. It is an ideal device for multi-level converter, electric vehicle charging, solar inverter, laser radar and LED lighting.

     EPC announced the introduction of EPC2050, which is a 350 V GaN transistor with a maximum RDS (on) of 80 m Ω and a pulse output current of 26 A. The size of EPC2050 is only 1.95 mm x 1.95 mm. Compared with the solution using equivalent silicon devices, the solution based on EPC2050 takes up ten times less board area.

     Applications that benefit from fast switching and small size EPC2050 include 120 V to 160 V DC/DC conversion, such as aerospace applications, 120 V to 150 V motor control for medical motors, DC/AC inverters, multi-level converters, such as totem pole PFC, and a variety of DC/DC solutions that convert 400 V inputs to 12 V, 20 V, or 48 V outputs. Other applications include fast charging, battery management systems, electric vehicle charging, solar inverters, high-power laser radar applications for autonomous vehicle and delivery vehicles, LED lighting, RF switches, consumer and industrial wiring such as wall mounted sockets and Class D audio amplifiers.

     EPC2050 is also suitable for applications using only 120 VAC. The typical power bus voltage is in the range of 170 V to 250 V, including a variety of applications for the U.S. market, such as power tools and wall mounted power supply equipment, 120 V inverters on the seat back of aircraft and commercial LED lighting.

     Alex Lidow, CEO of EPC, said: "EPC2050 devices let design engineers no longer have to choose between size and performance - they can have both, and the cost is lower!"