EPC promotes 100 V radiation resistant transistor with the lowest on resistance on the market

     EPC has expanded its radiation resistant gallium nitride product series. The newly introduced 100 V device is used for power conversion solutions in demanding airborne and other high reliability environments. Compared with any 100 V radiation resistant transistor on the market, it has the lowest on resistance.

     EPC Company announced the launch of 100 V, 3.9 m Ω, 345 APulsed radiation resistant GaN FETEPC7018, with a size of 13.9 mm2, its total dose level is greater than 1 Mrad, and the single event effect (SEE) immunity of linear energy transfer (LET) is 85 MeV/(mg/cm2). Like EPC7014, EPC7007 and EPC7019 radiation resistant product series, they all adopt chip level packaging. Packaging devices are provided by EPC Space.

     With higher breakdown strength, lower gate charge, lower switching loss, superior thermal conductivity and ultra-low on resistance, gallium nitride power devices are significantly superior to silicon based devices, which can achieve higher switching frequency. For demanding aerospace missions, gallium nitride power devices can achieve higher power density, higher efficiency, smaller and lighter circuits. Compared with silicon solutions, solutions based on GaN devices can work at higher total radiation, SEE and LET levels.

     The high-performance applications that benefit from the EPC7018 include DC/DC power supply, motor drive, laser radar, deep exploration and ion thrusters for aerospace applications, satellites and avionics. Alex Lidow, CEO and co-founder of EPC Company, said: "The EPC7018 is a high-power device with ultra-low on resistance for aerospace applications. It allows design engineers to achieve a new generation of power conversion and motor driver with higher operating frequency, higher efficiency and higher power density, which was previously impossible to achieve."