EPC promotes the smallest 100V, 2.2m Ω GaN FET

     EPC provides the industry with enhanced gallium nitride (eGaN) power field-effect transistors and integrated circuits. The latest 100 V EPC2071 gallium nitride field-effect transistors with a typical value of 1.7 m Ω are introduced, providing customers with more optional low-voltage gallium nitride transistors and immediate shipment.

     EPC2071 is an ideal device for applications requiring high power density, including 48 V~54 V input DC/DC converters for new servers and artificial intelligence. The low gate charge, QGD and zero reverse recovery loss enable it to operate at 1 MHz and above in a small size of 10.2 mm2, achieving high efficiency and high power density.

 
     EPC2071 is also an ideal BLDC motor driven device, including electric bicycles, electric motorcycles, robots, unmanned aerial vehicles and electric tools. The size of EPC2071 is 1/3 of silicon MOSFET, with the same on resistance. QG is 1/4 of MOSFET, and the dead time can be reduced from 500 ns to 20 ns, thus optimizing the efficiency of motor and inverter and reducing noise.

     The board area of EPC2071 is comparable to that of the fourth generation EPC product series, including EPC2021, EPC2022 and EPC2206. Area of the fifth generation products × The improvement in the on resistance makes the EPC2071 have the same on resistance as the previous generation, but its size is reduced by 26%.

     Alex Lidow, the co-founder and CEO of EPC, said, "EPC2071 is an ideal switching device for the primary side of 40 V~60 V/12 V~5V LLC DC/DC converters. Compared with the previous generation of 100 V GaN FETs, this 100 V device has higher performance and lower cost, allowing designers to achieve higher efficiency and higher power density at low cost. This device is also suitable for telecommunications, server power supply and solar applications