EPC's 40 V eGaNFET is ideal for telecommunications, Netcom and computing solutions that require high power densities

     EPC has introduced a 40 V, 1.3 mΩ Gallium nitride field-effect transistor (eGaN® FET) with device model EPC2067, designed for designers. The EPC2067 is smaller, more efficient, and more reliable than MOSFETs for applications with high performance and limited space.EPC Power Conversion Corporation (EPC) is a global leader in enhanced silicon-based gallium nitride power transistors and integrated circuits. The newly introduced EPC2067 (typical values are 1.3 mΩ and 40 V) expands the options for low-voltage devices

     The EPC2067 is ideal for applications requiring high power density, including 48 V to 54 V input servers. The low gate charge and zero reverse recovery loss enable high frequency operation of 1 MHz and higher, with high efficiency and high power density within a small occupancy area of 9.3 mm2.

     "The EPC2067 device is designed for the secondary side of LLC DC/DC converters that switch from 40 V to 60 V to 12 V," said Alex Lidow, CEO and co-founder of EPC. "This 40 V device offers higher performance and cost effectiveness than the previous generation of 40 V GaN FETs, allowing designers to achieve higher efficiency and power density at a lower cost."