EPC vehicle level eGaN FETs enable liDAR systems to see more clearly and efficiently

     EPC has announced that two more automotive gallium nitride (eGaN) devices have successfully achieved AEC Q101 test certification, enabling a wide range of new applications in automotive and other challenging environments. EPC2206 and EPC2212 are 80 VDS and 100 VDS discrete transistors in wafer-scale chip scale packages (WLCS), respectively.

     Products based on gallium nitride (eGaN) technology have been in mass production for more than 8 years, accumulating billions of hours of experience in real-world automotive applications, Applications include LiDAR and radar systems for fully autonomous vehicles, 48-12 V DC/DC converters for data center computers, infotainment systems with ultra-high fidelity, and high-strength truck headlights. These new devices have passed the rigorous AEC Q101 test certification, and will be followed by more discrete transistors and integrated circuits for the harsh automotive environment.

     The EPC2206 is an 80 V, 2.2 mΩ enhanced gallium nitride field-effect transistor in A 6.1 mm x 2.3 mm chip package with a pulse current of 390 A. The EPC2212 is A 100 V, 13.5 mΩ component in a 2.1 mm x 1.6 mm chip package with a pulse current of 75 A. Compared to equivalent MOSFETs, these gallium nitride Fets are much smaller in size and can achieve switching speeds 10 to 100 times faster.

     The EPC2206 is ideal for power management due to the features and features of very power-hungry electric components, such as electric start-stop, electric steering, electric suspension and variable speed air conditioning. In addition, emerging fully autonomous vehicles, additional system requirements such as lidar, radar, cameras and ultrasonic sensors are increasing the overall demand for power distribution systems, which will require vehicles to switch to 48-V bus systems. Gallium nitride devices, such as the EPC2206, make 48 V bus systems more efficient, smaller, lighter and less costly.

     The EPC2212 is ideal for emitting laser light in lidar systems because the FET triggers the laser signal, producing a high current and an extremely short pulse width for higher resolution, while the larger pulse current allows the liDAR system to see further. These two features, combined with their small size and low cost, make the eGaN FET ideal for radar and ultrasonic sensors in addition to supporting challenging automotive liDAR systems.

     Alex Lidow, CEO and co-founder of EPC, said: "Following these two certified gallium nitride devices, we will normalize the introduction of automotive transistors and integrated circuits to build the future of autonomous vehicles, save on gas use and improve driving safety. "Compared to today's aging silicon-based power MOSFETs for automotive use, EGAN-based products are faster, smaller, more efficient, less costly and more reliable."